DOI QR코드

DOI QR Code

Microstructure and Thermal Stability of High Permittivity Ta2O5

Ta2O5 고유전박막의 미세조직과 열적안정성

  • Min, Seok-Hong (Dept. of Metal and Materials Engineering, Kangnung National University) ;
  • Jung, Byung-Gil (Dept. of Metal and Materials Engineering, Kangnung National University) ;
  • Choi, Jae-Ho (Dept. of Metal and Materials Engineering, Kangnung National University) ;
  • Kim, Byoung-Sung (School of Materials Science and Engineering, Seoul National Univeristy) ;
  • Kim, Dae-Yong (School of Materials Science and Engineering, Seoul National Univeristy) ;
  • Shin, Dong-Woo (School of Materials Science and Engineering, Seoul National Univeristy) ;
  • Cho, Sung-Lae (School of Materials Science and Engineering, Seoul National Univeristy) ;
  • Kim, Ki-Bum (School of Materials Science and Engineering, Seoul National Univeristy)
  • 민석홍 (강릉대학교 금속재료공학과) ;
  • 정병길 (강릉대학교 금속재료공학과) ;
  • 최재호 (강릉대학교 금속재료공학과) ;
  • 김병성 (서울대학교 재료공학부) ;
  • 김대용 (서울대학교 재료공학부) ;
  • 신동우 (서울대학교 재료공학부) ;
  • 조성래 (서울대학교 재료공학부) ;
  • 김기범 (서울대학교 재료공학부)
  • Published : 2002.10.01

Abstract

TiN and TaN films as electrode materials of reactive sputtered $Ta_2$$O_{5}$ were prepared by sputtering to compare their thermal stabilities with $Ta_2$$O_{5}$ The microstructural change of $Ta_2$$O_{5}$ films with annealing was also investigated. As- deposited $Ta_2$$O_{5}$ film on $SiO_2$ was amorphous and annealing of 80$0^{\circ}C$ for 30 min made it transform to $\beta$-Ta$_2$O$_{5}$ crystalline which contains amorphous particles with the size of a few nm. Crystallization temperature of Ta$_2$Ta_2$$O_{5}$ on TaN is higher than that on TiN electrode. The interface between TaN and Ta$_2$O$_{5}$ maintained stably even after vacuum annealing up to $800^{\circ}C$ for 1 hr, but TiN interacted with $Ta_2$$_O{5}$ and so interdiffusion between TiN and $Ta_2$$O_{5}$ occurred by vacuum annealing of 80$0^{\circ}C$ for 1 hr. It indicates that TaN is thermally more stable with $Ta_2$$O_{5}$ than TiN.N.

Keywords

References

  1. R. Ramesh, Thin Film Ferroelectric Materials and Devices, p.2, Kluwer Academic Publishers, (1997)
  2. T.C. May and M.H. Woods, IEEE Trans. Electron Devices, ED-26, 2 (1979)
  3. D. Laviale, J.C. Oberlin and R. A. Devine, Appl. Phys. Lett., 65(16), 2021 (1994) https://doi.org/10.1063/1.112781
  4. T. Aoyama, S. Saida, Y. Okayama, M. Fujisaki, K. Imai and T. Arikado, J. of the Electrochemical Society, 143(3), 977 (1996) https://doi.org/10.1149/1.1836568
  5. S. Kamiyama, T. Saeki, H. Mori and Y. Numasawa, IEEE IEDM Tech. Dig., 827 (1991)
  6. S. Kamiyama, P. Y. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama and A. Ishitani, J. of the Electrochemical Society, 140(6), 1617 (1993) https://doi.org/10.1149/1.2221612
  7. H. Shinriki and M. Nakata, IEEE Trans. Electron Devices, 38(3), 455 (1991) https://doi.org/10.1109/16.75185
  8. H. Shinriki, M. Nakata, Y. Nishioka and K. Mukai, IEEE Electron Devices Lett, 10(11), 514 (1989) https://doi.org/10.1109/55.43121
  9. S. Kamiyama, H. Suzuki and H. Watanabe, J. of the Electrochemical Society, 141(5), 1246 (1994) https://doi.org/10.1149/1.2054904
  10. Y. Nishioka, H. Shinriki and K. Mukai, J. Appl. Phys., 61(6), 2335 (1987) https://doi.org/10.1063/1.337945
  11. M. Saitoh, T. Mori and H. Tamura, IEEE IEDM Tech. Dig., 680 (1986)
  12. H. Matsuhashi and S. Nishikawa, Jpn. J. Appl. Phys., 33(3A), 1293 (1994) https://doi.org/10.1143/JJAP.33.1293
  13. J.P. Chang, M.L. Steigerwald, R.M. Fleming, R.L. Opila, and G.B. Alers, Appl. Phys. Lett., 74(24), 3705 (1999) https://doi.org/10.1063/1.123227
  14. P.H. Chang and H.Y. Liu, Thin solid film, 258, 56 (1995) Chang, P.H.;Liu, H.Y. https://doi.org/10.1016/0040-6090(94)06402-4
  15. E. Atanassova, T. Dimitrova, J. Koprinarova, Appl. Surf. Sci., 84, 193 (1995) https://doi.org/10.1016/0169-4332(94)00538-9
  16. A. Pignolet, G.M. Rao, S.B. Krupanidhi, Thin Solid Film, 258, 230 (1995) https://doi.org/10.1016/0040-6090(94)06322-2
  17. H.J. Lee, R. Sinclair, M.B. Lee and H.D. Lee, J. Appl. Phys., 83(1), 139 (1998) https://doi.org/10.1063/1.366732
  18. K. Ishibashi, B.K. Patnaik, N.R. Parikh, G.S. Sandhu and P.C. Fazan, J. Vac. Sci. Technol. B., 12(4), 2822 (1994) https://doi.org/10.1116/1.587198
  19. T. Dimitrova, K. Arshak, and E. Atanassova, Thin Solid Films, 381, 31 (2001) https://doi.org/10.1016/S0040-6090(00)01569-8