Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Thermal Stability of Titanium and Cobalt Thin Films on Silicon Oxide Spacer

티타늄과 코발트 박막의 산화규소 스페이서에 대한 열적안정성

  • Cheong, Seong-Hwee (Department of Materials Sciecne and Engineering, The University of Seoul) ;
  • Song, Oh-Sung (Department of Materials Sciecne and Engineering, The University of Seoul) ;
  • Kim, Min-Sung (Department of Information and Communications Engineering, School of Information Engineering)
  • 정성희 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 김민성 (동명정보대학교 정보통신공학과)
  • Published : 2002.11.01
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Abstract

We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO$_2$ for the salicide process. We prepared Ti 350 $\AA$, Co 150 $\AA$, Co 150 $\AA$/Ti 100 $\AA$ and Ti 100 $\AA$/Co 150 $\AA$ films on 1000 $\AA$-thick thermally grown SiO$_2$ substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of $500^{\circ}C$, $600^{\circ}C$, and $700^{\circ}C$ for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above $700^{\circ}C$, Co agglomerated at $600^{\circ}C$, and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

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