Journal of the Korean Ceramic Society (한국세라믹학회지)

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Ferroelectric Properties of ErMnO3 Thin Film Prepared by Sol-gel Method

졸겔법으로 제조한 ErMnO3 박막의 강유전 특성

  • Kim, Yoo-Taek (Department of Materials Engineering, Kyonggi University) ;
  • Kim, Eung-Soo (Department of Materials Engineering, Kyonggi University) ;
  • Chae, Jung-Hoon (Department of Materials Engineering, Kyonggi University) ;
  • Ryu, Jae-Ho (Department of Materials Engineering, Kyonggi University)
  • Published : 2002.01.01
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Abstract

Ferroelectric properties of $ErMnO_3$ thin films deposited on Si(100) substrate using Sol-gel process with metal salts were investigated. $ErMnO_3$ thin films with a (001) preferred orientation were crystallized at 800$^{\circ}C$. The $ErMnO_3$ thin film post-annealed at 800$^{\circ}C$ for 1 h showed the dielectric constant(k) of 26 and the dielectric loss(tan ${\delta}$) of 0.032 at the frequency range from 1 to 100 KHz. The grain size of $ErMnO_3$ thin film post-annealed at 800 for 1 h was 10∼30 nm. The remanent polarization($P_r$) of the $ErMnO_3$ thin films increased with increasing (001) preferred orientation. The $ErMnO_3$ thin films post-annealed at 800$^{\circ}C$ for 1 h showed the remanent polarization($P_r$) of 400 nC/$cm^2$, with the increase of post-annealing time at 800$^{\circ}C$, the coercive field($E_c$) of thin films was lowered because the dense and homogeneous thin films were obtained.

$Er(NO_3)_3{\codt}5H_2O,\;Mn(CH_3CO_2)_2{\cdot}4H_2O$를 출발원료로 사용하여 졸-겔 법으로 Si(100) 기판 위에 코팅된 $ErMnO_3$ 박막의 강유전 특성에 관하여 연구하였다. $ErMnO_3$ 박막은 800$^{\circ}C$에서 결정화가 시작되었으며, (001)로 우선 배향된 $ErMnO_3$ 박막을 얻을 수 있었다. 본 실험에서 800$^{\circ}C$에서 1 h 열처리하여 얻은 $ErMnO_3$ 박막은 1∼100 KHz의 주파수 범위에서 유전 상수(k)는 26, 유전 손실(tan ${\delta}$)은 0.032의 값을 나타내었으며, 이때 $ErMnO_3$ 박막의 입자 크기는 10∼30 nm이었다. 강유전 특성은 (001) 배향성이 증가할수록 잔류 분극 값이 증가하였으며, 800$^{\circ}C$에서 1시간 열처리하여 $ErMnO_3$ 박막의 잔류 분극 값($P_r$)은 400 nC/$cm^2$를 나타내었다. 또한 열처리 시간이 증가할수록 치밀하고 균일한 박막을 얻어 낮은 항전계 ($E_c$) 값을 가졌다.

Keywords

References

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