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Spectroscopical Analysis of SiO2 Optical Film Fabricated by FHD(Flame Hydrolysis Deposition)

FHD(Flame Hydrolysis Deposition)공정으로 제작된 SiO2 광도파막의 분광학적 분석

  • Kim, Yun-Je (Department of Ceramic Engineering, Hanyang University) ;
  • Shin, Dong-Wook (Department of Ceramic Engineering, Hanyang University)
  • 김윤제 (한양대학교 세라믹공학과) ;
  • 신동욱 (한양대학교 세라믹공학과)
  • Published : 2002.01.01

Abstract

Since many process parameters of FHD(Flame Hydrolysis Deposition) are involved in forming multi-component amorphous silica film ($SiO_2-B_2O_3-P_2O_5-GeO_2$), it has not been easy to predict the optical, mechanical and thermal properties of deposited film from the simple process parameters, such as source flow rate. Furthermore, the prediction of final composition of film becomes even more difficult after sintering at high temperature due to the evaporation of volatile dopants. The motivation of the study was to clarify the quantitative relationship between simple process parameters such as the flow rate of source gases and resulting chemical composition of sintered film. Hence, the compositional analysis of silica soot by FTIR(Fourier Transformation Infrared Spectroscopy) and ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) under the control of the amount of dopant was carried out to obtain the quantitative composition. By measuring spectrum of absorbance from FTIR, the compositional change of B-O, Si-O, OH($H_2O$) in silica film was measured. The concentrations of these dopants were also measured by ICP-AES, which were compared with the FTIR result. The final quantitative relationship between simple process parameters and composition was deduced from the comparison between two results.

FHD(Flame Hydrolysis Deposition)공정은 화염 형성에 관여하는 장비의 조건들과 그에 따른 다양한 공정인자에 의하여 박막의 조성이 결정되며, 증착된 막을 치밀화하는 첨가물의 증발로 인해 열처리공정에서 조성이 변화되므로 공정인자로부터 최종적인 광도파막의 조성을 예측하는 것은 매우 어렵다. 본 연구에서는 FHD 공정에서 첨가가스의 유량을 제어하여 박막의 조성 및 광학적 특성을 예측할 수 있는 공정 분석의 기초자료를 제공하기 위하여 FTIR(Fourier Transformation Infrared Spectroscopy)측정과 ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry)측정을 통해 실리카 막의 조성분석에 대한 연구를 수행하였다. FTIR 흡수 스펙트럼을 통해 실리카 막에 존재하는 Si-O, B-O band를 측정하고 정성적 농도변화를 관찰 하였고, ICP-AES를 통해 Boron의 농도를 정량적으로 측정하였다. 이 두 결과로부터 FTIR을 이용한 정량적 조성분석의 기초자료인 B-O band의 흡광계수를 구하였다.

Keywords

References

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