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A Study on Fabrication of Photosensitive Sr0.9Bi2.1Ta2O9 Thin Film by Sol-gel Self-patterning Technique

Sol-gel Self-patterning 기술을 이용한 광감응성 Sr0.9Bi2.1Ta2O9 박막의 제조기술에 관한 연구

  • Yang, Ki-Ho (Department of Materials Science and Engineering, Korea University) ;
  • Park, Tae-Ho (Department of Materials Science and Engineering, Korea University) ;
  • Lim, Tae-Young (Korea Institute of Ceramic Engineering and Technology) ;
  • Auh, Keon-Ho (Department of Ceramic Engineering, Hanyang University) ;
  • Kim, Byong-Ho (Department of Materials Science and Engineering, Korea University)
  • Published : 2002.01.01

Abstract

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ thin films have been prepared by spin coating method using photosensitive sol solution. Strontium ethoxide, tertramethylheptanedionato bismuth and tantalum ethoxide were used as starting materials. As UV exposure time to the SBT thin film increased, the UV absorption peak intensity of metal ${\beta}$-diketonate decreased due to reduced solubility by M-O-M bond formation. Solubility difference by UV irradiation on SBT thin film allows to obtain a fine patterning of thin film. Also, The ferroelectric properties of the UV irradiated SBT thin films were superior to those of the no-UV irradiated films.

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$$Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

Keywords

References

  1. D. J. Taylor, R. E. Jones, Y. T. Lii, P. Zurcher, P. Y. Chu and S. J. Gillespie, 'Integration Aspects and Electrical Properties of $SrBi_2Ta_2O_9$ for Non-volatile Memory Applications,' Mat. Res. Soc. Symp. Proc., 433 97-108 (1996) https://doi.org/10.1557/PROC-433-97
  2. Y. Xu, 'Ferroelectric Thin Films,' pp.206-10 in Ferroelectric Materials and Their Applications, North Holland, 1991
  3. A. I. Kingon, S. K. Streiffer, C. Basceri and S. R. Summerfelt, 'High Permittivity Perovskite Thin Films for Dynamic Random-acess Memories,' MRS Bulletin, Electroceramic Thin Films Part II, 46-52 (1996)
  4. M. Suzuki, 'Review on Future Ferroelectric Nonvolatile Memory : FeRAM-From the Point of View of Epitaxial Oxide Thin Films-,' J. Ceram. Soc. Jpn., 103 1099-111 (1995) https://doi.org/10.2109/jcersj.103.1099
  5. H. Fujisawa, S. Hyodo, K. Jitsui, M. Shimizu, H. Niu, H. Okino and T. Shiosaki, 'Elechcal Properties of PZT Thin Films Grown on Ir/Ir$O_2$ Bottom Electrodes By MOCVD,' Integrated Ferroelectrics, 21 107-14 (1997)
  6. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott, 'Fatigue-free Ferroelectric Capacitors with Platinum Electrodes' Nature, 374 627-29 (1995) https://doi.org/10.1038/374627a0
  7. J-C. Lee, Y-H. Oh and S-H. Kim, 'Semiconductor and Informadonized Society(in Kor.),' Sigma Press, 55-6 (1999)
  8. S. DeOrnellas, P. Rajora and A. Cofer, 'Challenges for Plasma Etch Integration of Ferroelectric Capacitors in FeRAM's and DRAM's,' Intesrated Ferroelectrics, 17 395-402 (1997) https://doi.org/10.1080/10584589708013014
  9. N. Tohge and Y. Takama, 'Direct Fine-patterning of PZT Thin Films Using Photosensitive Gel Films Derived from Chemically Modified Metal-alkoxides,' J. of Mater. Sci., 10 273 (1999)

Cited by

  1. Thin Films by Sol-gel Method vol.40, pp.2, 2003, https://doi.org/10.4191/KCERS.2003.40.2.184