Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Vertical Growth of CNTs by Bias-assisted ICPHFCVD and their Field Emission Properties

DC Bias가 인가된 ICPHFCVD를 이용한 탄소나노튜브의 수직 배향과 전계방출 특성

  • Kim, Kwang-Sik (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Ryu, Ho-Jin (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Jang, Gun-Eik (Department of Materials Science and Engineering, Chungbuk National University)
  • 김광식 (한국화학연구원 화학소재연구부) ;
  • 류호진 (한국화학연구원 화학소재연구부) ;
  • 장건익 (충북대학교 재료공학과)
  • Published : 2002.01.01
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Abstract

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

본 연구에서는 DC bias가 인가된 유도결합형 플라즈마 열선 화학기상증착법을 이용하여 580$^{\circ}C$의 저온에서 탄소나노튜브를 수직 배향시켰다. 성장된 탄소나노튜브의 기판으로는 강화유리 위에 촉매층으로 Ni과 전도층으로 Cr을 300/200 ${\AA}$(Ni/Cr) 증착된 것으로 R-F magnetron sputtering을 이용하여 제작하였다. 성장 시 RF power와 DC bias power는 150W와 80W이며 텅스텐 필라멘트 power는 7∼8 A로 인가하였다. 성장된 탄소나노튜브는 속이 비어 있는 다중벽으로 이루어 졌으며 성장된 탄소나노튜브 끝단에는 금속 촉매로 보이는 Ni이 존재하는 것을 알 수 있었다. 탄소나노튜브는 흑연화도가 우수하며 그에 따라 탄소나노튜브의 전계 방출 특성도 우수하게 평가되었다. 성장된 탄소나노튜브의 구동 전압은 약 3 V/${\mu}m$이었다.

Keywords

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