ETRI Journal

  • 제25권4호
  • /
  • Pages.247-252
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  • 2003
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Excimer Laser-Assisted In Situ Phosphorus Doped $Si_{(1-x)}Ge_x$ Epilayer Activation

  • Bae, Ji-Cheul (Institute of Basic Science, Changwon National University) ;
  • Lee, Young-Jae (Department of Electronics Engineering, Dongeui University)
  • 투고 : 2002.10.28
  • 발행 : 2003.06.30
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초록

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

키워드

참고문헌

  1. IEE Electronics Lett. v.38 no.16 Ultra-Shallow Junction with Elevated SiGe Source/Drain Fabricated by Laser-Induced Atomic Layer Doping Lee, Young-Jae;Jung, Eun-Sik;Bea, Ji-Chel
  2. Journal of the Korean Physical Society v.41 no.1 A Novel Structure MOSFET’s Fabricated by Using SiGe Selective Epitaxial Growth Method and Laser Induced Atomic Layer Doping Method Bea, Je-Chel;Lee, Young-Jae;Choi, Young-Shig
  3. Tech Digest of IEDM99 A Novel Atomic Layer Doping Technology for Ultra-Shallow Junction in Sub-0.1um MOSFET’s Song, Y.H.;Bea, J.C.;Oonishi, M.;Honda, T.;Kurino, H.;Koyanagi, M.
  4. Tech Digest of IEDM99 Improved PMOSFET Short-Channel Performance Using Ultra-Shallow Si0.8Ge0.2 Source/Drain Extensions Tekeuchi, H.;Wen-Chin;Ranade, P.;King, Tsu-Jae
  5. Phys. Rev. B v.58 no.15 Subband Structure and Mobility of Two-Dimensional Holes in Strained Si/SiGe MOSFETs Oberhuber, R.;Zandler, G.;Vogl, P.
  6. ETRI J. v.25 no.3 DC and RF Characteristics of Si0.8Ge0.2 pMOSFETs: Enhanced Operation Speed and Low 1/f Noise Song, Young-Joo;Shim, Kyu-Hwan;Kang, Jin-Young;Cho, Kyoung-Ik
  7. Journal of the Electrochemical Society v.147 no.11 Control of Arsenic Doping During Low Temperature CVD Epitaxy of Silicon (100) Van Noort, W.D.;Nanver, L.K.;Slotboom, J.W.
  8. Proc. of the 28th European Solid State Device Research Conf. Mobility Enhancement of Two-Dimensional Holes in Strained Si/SiGe MOSFETs Oberhuber, R.;Zandler, G.;Vogl, P.
  9. The Japan Society of Applied Physics v.71 no.5 Excimer-Laser-Grown Silicon Thin Films with Ultralarge Grains Masakiyo Matsumura
  10. Proc. of the IEEE v.80 no.10 UHV/CVD Growth of Si and Si:Ge Alloys: Chemistry, Physics, and Device Applications Meyerson, B.
  11. IEEE Electron Dev. Lett. v.17 no.3 High Speed p-Type SiGe Modulation-Doped Field-Effect Transistors Arafa, M.;Fay, P.;Ismail, K.;Chu, J.O.;Meyerson, B.S.;Adesida, I.