가열에 의한 웨이퍼 형상 변화가 CMP에 미치는 영향

Effects of Change of Wafer Shape through Heating on Chemical Mechanical Polishing Process

  • 권대희 (부산대학교 대학원 정밀기계공학과) ;
  • 김형재 (부산대학교 대학원 정밀기계공학과) ;
  • 정해도 (부산대학교 정밀정형 및 금형가공 연구센터)
  • 발행 : 2003.01.01

초록

Removal rate and Within Wafer Non-Uniformity (WIWNU), the most critical issues in Chemical Mechanical Polish (CMP) process, are related to the pressure distribution, wafer shape, slurry flow, mechanical property of pad and etc. Among them, wafer warp generated by other various manufacturing process of wafer may induce the deviation of pressure distribution on the backside of wafer. In the convex shaped wafer the pressure onto the backside of wafer is higher than that of perfectly flat shaped wafer. Besides, such an added pressure is in proportion to the curvature of wafer. That is, the bigger the curvature of wafer becomes the higher the removal rate goes. And the WIWNU is known to be directly related to the pressure distribution on the wafer as well. In other words, the deviation of pressure distribution is in proportion to the WIWNU. In this paper, it is found that the wafer shape may be modified through heating the backside of it and thus properly changed pressure onto the backside of it may improve the WIWNU.

키워드

참고문헌

  1. Yuan Zhang et al, 'Wafer Shape Measurement and Its Influence on Chemical Mechanical Planarization,' the Electrochemical Society Proceedings, 96-22, pp. 91-96, 1997
  2. Scott R. Runnels, 'Tribology Analysis of Chemical-Mechanical Polishing,' J. Electrochem. Soc., Vol. 141, No. 6, pp. 1698-1701, 1994 https://doi.org/10.1149/1.2054985
  3. Wei-Tsu Tseng et al, 'Effects of Film Stress on the Chemical Mechanical Polishing Process,' J. Electrochem. Soc., Vol. 146, No. 11, pp. 4273-4280, 1999 https://doi.org/10.1149/1.1392627
  4. K. L. Johnson, 'Contact Mechanics,' Cambridge University Press, Cambridge, New York, New Rochelle, Melbourne, Sydney, pp. 36-38