Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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The Heat Treatment Effect of ZrO2 Buffer Layer on the Electrical Properties of Pt/SrBi2Ta2O9/ZrO2/Si Structure

ZrO2완충층의 후열처리 조건이 Pt/SrBi2Ta2O9/ZrO2/Si 구조의 전기적 특성에 미치는 영향

  • 정우석 (부산대학교 무기재료공학과) ;
  • 박철호 (부산대학교 무기재료공학과) ;
  • 손영국 (부산대학교 무기재료공학과)
  • Published : 2003.01.01
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Abstract

$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{\circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.

R.F 마그네트론 스퍼터링법으로 ZrO$_2$ 확산 방지막과 SrBi$_2$Ta$_2$$O_{9}$ 강유전 박막을 증착하여 MFIS 구조론 제작하였다. 절연층의 후열처리가 절연층 및 MFIS 구조의 전기적 특성에 미치는 영향을 관찰하기 위해서 일반 분리기로와 RTA로에서 각각 산소 분위기와 아르곤 분위기에서 550~85$0^{\circ}C$의 온도범위에서 후열처리를 행한 후, C-V 특성 및 누설전류 특성을 분석하였다. RTA 75$0^{\circ}C$ 산소 분위기에서 후열처리된 20nm의 두께를 가지는 ZrO$_2$ 박막에서 최대의 메모리 윈도우 값을 얻었다. Pt/SBT(260nm)ZrO$_2$(20nm)/Si 구조는 Pt/SBT(260nm)/Si 구조의 값보다 C-V 특성 및 누설전류 특성이 우수하였으며 이러한 결과는 ZrO$_2$ 박막이 SBT와 Si사이에서 우수한 완충층의 역할을 함을 알 수 있었다.

Keywords

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