Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지
DOI QR코드

DOI QR Code

Electrical Properties of Ba0.66Sr0.34TiO3 Thin Films Fabricated by a Seed-layer Process

Seed-layer 공정을 이용한 Ba0.66Sr0.34TiO3박막의 제조 및 전기적 특성 연구

  • 최덕영 (부산대학교 무기재료공학과) ;
  • 박철호 (부산대학교 무기재료공학과) ;
  • 손영국 (부산대학교 무기재료공학과)
  • Published : 2003.02.01
Download PDF
⟨ Previous Next ⟩

Abstract

$Ba_{0.66}Sr_{0.34}TiO_3$ thin films and seed-layers were deposited on $Pt/Ti/SiO_2/Si$substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties (such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.

R.F. Magnetron Sputtering법을 이용하여 Pt/Ti/ $SiO_2$/Si기판 위에 seed-layers와 $Ba_{0.66}$S $r_{0.34}$Ti $O_3$박막을 제조하였다. 다양한 기판온도에 따른 BST 박막의 전기적인 특성(정전용량과 누설전류)과 seed-layer층이 BST 박막에 미치는 영향을 조사하였다. BST 박막은 seed-layer층을 삽입함으로써 박막의 결정성이 향상되었고, 박막의 기판온도(결정화온도)도 상당히 낮출 수 있었다. 순수한 BST에 비하여 seed-layer를 삽입한 BST는 높은 유전상수와 낮은 유전손실 및 낮은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. BST 박막의 전기적 특성은 기판온도에 따라 영향을 받고, seed-layer에 의해 향상됨을 알 수 있었다.

Keywords

References

  1. Current Opinion in Solid State and Materi. Sci. v.4 no.1 Ferroelectric Films and Devices A. I. Kingon;S. K. Streiffer https://doi.org/10.1016/S1359-0286(99)80009-6
  2. IEEE Transactions on Electron Devices v.44 no.7 Stacked Capacitor Technology with ECR Plasma MOCVD (Ba,Sr)$TiO_3\;and\;RuO_2/Ru/TiN/TiSi_x$ Storage Nodes for Gb-scale DRAM's S. Yamamichi;P. Y. Lesaicherre;H. Yamaguchi;K. Takemura;S. Sone;H. Yabuta;K Sato;T. Tamura;K. Nakajima;S. Ohnishi;K. Tokashiki;Y. Hayashi;Y. Kato;Y. Miyasaka;M. Yoshida;H. Ono https://doi.org/10.1109/16.595934
  3. Materi. Sci. and Engineering B v.56 no.2-3 (Ba,Sr)$TiO_3$ Thin Films for Ultra Large Scale Dynamic Random Access Memory. A Review on the Process Integration C. S. Hwang https://doi.org/10.1016/S0921-5107(98)00233-5
  4. J. Kor. Ceram. Soc. v.32 no.12 Microstructure and Ferroelectric Properties of Sol-gel Derived $PbTiO_3$ Interlayered PZT Thin Films D. K. Yim;S. Y. Choi;H. J. Jung;Y. J. Oh
  5. Jpn. J. Appl. Phys. Part2-Lett. v.38 no.2B Low Temperature Chemical Vapor Deposition of $(Ba,Sr)TiO_3$ Thin Films for High Density Dynamic Random Access Memory Capacitors J. H. Joo;J. B. Park;Y. Kim;K. S. Lee;J. S. Lee;J. S. Roh;J. J. Kim https://doi.org/10.1143/JJAP.38.195
  6. Mater. Sci. and Engi. B v.57 no.2 Study of the Electrical Properties of Pulsed Laser Ablated $(Ba_{0.5}Sr_{0.5})TiO_3$ Thin Films S. Saha;S. B. Krupanidhi https://doi.org/10.1016/S0921-5107(98)00303-1
  7. J. Kor. Ceram. Soc. v.38 no.5 Electrical Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ Thin Film with Various Heat Treatment Conditions Y. G. Son
  8. Jpn. J. Appl. Phys. Part 2-Lett. v.36 no.7A Structural and Electrical Properties of $Ba_{0.5}Sr_{0.5}TiO_3$ Films on Ir and $IrO_2$ Electrodes H. J. Cho;C. S. Kang;C. S. Hwang;J. W. Kim;H. Horii;B. T. Lee;S. I. Lee;M. Y. Lee https://doi.org/10.1143/JJAP.36.L874
  9. J. Appl. Phys. v.83 no.7 A Comparative Study on the Electrical Conduction Mechanisms of $(Ba_{0.5}Sr_{0.5})TiO_3$ Thin Films on Pt $IrO_2$ Electrodes C. S. Hwang;B. T. Lee;C. S. Kang;J. W. Kim;K. H. Lee;H. J. Cho;H. Horii;W. D. Kim;S. I. Lee;Y. B. Roh;M. Y. Lee https://doi.org/10.1063/1.366595
  10. Materi. Chem. and Physi. v.61 no.2 Bottom Electrode Dependence of the Properties of $(Ba,Sr)TiO_3$ Thin Film Capacitors Y. C. Choi;B. S. Lee https://doi.org/10.1016/S0254-0584(99)00120-0
  11. J. Appl. Phys. v.86 no.1 Dielectric and Electrical Properties of Sputter Grown $(Ba,Sr)TiO_3$Thin Films J. C. Shin;J. Park;C. S. Hwang;H. J. Kim https://doi.org/10.1063/1.370759
  12. J. Electrochemical Soc. v.145 no.8 Conduction Mechanism and Temperature-dependent Current-voltage in $(Ba,Sr)TiO_3$ Thin Films M. S. Tsai;T. Y. Tseng https://doi.org/10.1149/1.1838725
  13. J. Appl. Phys. v.85 no.4 Variations of the Leakage Current Density and the Dielectric Constant of $Pt/(Ba,Sr)TiO_3/Pt$ Capacitor by Annealing under a $N_2$ Atmosphere C. S. Hwang;S. H. Joo https://doi.org/10.1063/1.369562
  14. J. Kor. Ceram. Soc. v.39 no.8 Microstructure and Ferroelectric Properties of PZT Thin Films Deposited on Various Interlayers by R.F. Magnetron Sputtering C. H. Park;D. Y. Choi;Y. G. Son https://doi.org/10.4191/KCERS.2002.39.8.742
  15. J. Kor. Insti. Elec. and Elec Mater. Engineers v.12 no.7 A Study on PZT Thin Film Capacitor and Their Bottom Electrode Y. Park;S. M. Jung;S. I. Moon;K. W. Chung;S. H. Kim;I. T. Song;J. S. Yi
  16. Thin Solid Films v.269 no.1-2 Pt-base Electrodes and Effects on Phase Formations and Electrical Properties of High-dielectric Thin Films W. J. Lee;Y. M. Kim;H. G. Kim https://doi.org/10.1016/0040-6090(95)06755-8
  17. J. Kor. Ceram. Soc. v.36 no.4 Dielectric and Pyroelectric Properties of $(Ba,Sr)TiO_3$ Thin Films Grown by RF Magnetron Sputtering J. S. Park;J. S. Kim;J. H. Lee;Y. H. Lee;S. R. Han;J. S. Lee