Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지
DOI QR코드

DOI QR Code

Growth of Heteroepitaxial ZnO Thin Film by Off-axis RF Magnetron Sputtering

Off-axis 고주파 마그네트론 스퍼터링법을 이용한 이종에피텍셜 ZnO 박막 성장

  • 박재완 (한국과학기술연구원 박막재료연구센터, 한양대학교 재료공학과) ;
  • 박종완 (한양대학교 재료공학과) ;
  • 이전국 (한국과학기술연구원 박막재료연구센터)
  • Published : 2003.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.

Off-axis 고주파 마그네트론 스퍼터링법으로 사파이어(0001) 기판 위에 이종에피텍셜 ZnO 박막을 제조하였다. ZnO 박막의 결정성은 증착압력, RF power 그리고 기판온도의 공정조건 변화에 많은 영향을 받았으며, 스퍼터링된 입자의 적당한 kinetic energy와 기판표면에서의 표면이동도(surface mobility)가 조화를 이룰 때 결정성이 우수한 이종에피텍셜 박막을 을 얻을 수 있었다. 이종에피텍셜 ZnO 박막의 Photoluminescence(PL) 특성 측정 결과, 저온(17K)에서 약 3.36 eV의 자외선 영역 발광을 관찰할 수 있었으며, 상온에서도 3.28 eV의 자외선 영역 발광을 관찰할 수 있었다. ZnO 박막을 산소 분위기에서 열처리함에 따라 결정성은 향상되는 반면 자외선 영역의 발광은 급격히 감소하는 경향을 보였다.

Keywords

References

  1. Appl. Phys. Lett. v.69 no.12 Degradation Phenomena of Multilayer ZnO-glass Varistors Studied by Deep Level Transient Spectroscopy Y.P.Wang;W.I.Lee;T.Y.Tseng https://doi.org/10.1063/1.117493
  2. Jpn. J. Appl. Phys. v.41 no.5B Shear Bulk Wave Transducer Made of (11＼bar20)-plane Epitaxial ZnO Film on R-sap-phire M.Kadota;T.Miura https://doi.org/10.1143/JJAP.41.3281
  3. Jpn. J. Appl. Phys. v.36 no.8B Extremely Transparent and Conductive ZnO:Al Thin Films Prepared by Photo-assisted Metalorganic Chemical Vapor Deposition Using AlCl₃(6H₂O) as New Doping Material S.Y.Myong;S.J.Baik;C.H.Lee;W.Y.Cho;K.S.Lim https://doi.org/10.1143/JJAP.36.L1078
  4. Appl. Phys. Lett. v.31 no.2 Elastic-surface-wave Temperature Coefficients of Delay Line with ZnO Thin Film Y.Nakagawa https://doi.org/10.1063/1.89588
  5. Handbook of Chemistry and Physics(74 ed.) D.R.Lide
  6. The Institute of Electrical Engineers Properties of Wide Bandgap Ⅱ-Ⅵ Semiconductors R.Bhargava
  7. Appl. Phys. Lett. v.70 no.17 Optically Pumped Lasing of ZnO at Room Temperature D.M.Bagnall;Y.F.Chen;Z.Zhu;T.Yao;S.Koyama;M.Y.Shen;T.Goto https://doi.org/10.1063/1.118824
  8. J. Kor. Ceram. Soc. v.39 no.10 The Effect of Residual H₂O Pressure on Gallium-doped ZnO Films Deposited by Magnetron Sputtering P.K.Song;Y.J.Kwon;J.M.Cha;B.C.Lee;B.K.Ryu;K.H.Kim https://doi.org/10.4191/KCERS.2002.39.10.928
  9. J. Kor. Ceram. Soc. v.39 no.10 Electrical Properties of Sputtered Gallium-doped Zinc Oxide Films Deposited Using Ne, Ar, or Kr Gas P.K.Song;B.K.Ryu;K.H.Kim https://doi.org/10.4191/KCERS.2002.39.10.935
  10. J. Appl. Phys. v.84 no.5 Defects and Interfaces in Epitaxial ZnO/α-Al₂O₃and AIN/ZnO/αAl₂O₃Heterostructures J.Narayan;K.Dovidenko;A.K.Sharma;S.Oktyabrsky https://doi.org/10.1063/1.368440
  11. J. Kor. Ceram. Soc. v.39 no.7 Preparation of in Situ Patterned ZnO Thin Films by Microcontact Printing H.J.Lim;K.H.Yoon;Y.J.Oh https://doi.org/10.4191/KCERS.2002.39.7.649
  12. J. Appl. Phys. v.51 no.12 The Effect of RF Power on Reactively Sputtered Zinc Oxide C.R.Aita;R.J.Lad https://doi.org/10.1063/1.327585
  13. J. Vac. Sci. Technol. A v.18 no.6 Photoluminescence and Heteroepitaxy of ZnO on Sapphire Substrate(0001) Grown by RF Magnetron Sputtering K.K.Kim;J.H.Song;H.J.Jung;S.J.Park;J.H.Song;J.Y.Lee https://doi.org/10.1116/1.1318192
  14. J. Vac. Sci. Technol. A v.15 no.3 Epitaxial Growth of ZnO Thin Films on R-plane Sapphire Substrate by Radio Frequency Magnetron Sputtering Y.J.Kim;Y.T.Kim;H.K.Yang;J.C.Park;J.I.Han;Y.E.Lee;H.J.Kim https://doi.org/10.1116/1.580437
  15. Appl. Phys. Lett. v.75 no.18 Photoluminescence and Ultraviolet Lasing of Polycrystalline ZnO Thin Films Prepared by the Oxidation of the Metallic Zn S.L.Cho;J.Ma;Y.K.Kim;Y.Sun;G.K.L.Wong;J.B.Ketterson https://doi.org/10.1063/1.125141
  16. Appl. Phys. Lett. v.68 no.3 Correlation between Photoluminescence and Oxygen Vacancies in ZnO Phosphors K.Vanheusden;C.H.Seager;W.L.Warren;D.R.Tallant;J.A.Voigt https://doi.org/10.1063/1.116699
  17. J. Appl. Phys. v.91 no.9 Enhancement of the Light Emissions from Zinc Oxide Films by Controlling the Post-treatment Ambient W.S.Shi;O.Agyeman;C.N.Xu https://doi.org/10.1063/1.1466527
  18. Appl. Phys. Lett. v.79 no.7 Green Luminescent Center in Undoped Zinc Oxide Films Deposited on Silicon Substrates B.Lin;Z.Fu;Y.Jia https://doi.org/10.1063/1.1394173
  19. Jpn. J. Appl. Phys. v.40 no.6A Ab Initio Pseudopotential Calculations of Electronic Structure of Off-stoichiometric ZnO H.Q.Ni;Y.F.Lu;Z.M.Ren https://doi.org/10.1143/JJAP.40.4103