Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Influence of ZnO-Nb2O5 Substitution on Microwave Dielectric Properties of the ZrTi04 System

  • Kim, Woo-Sup (Materials Research Group, Chip Component Team, Samsung Electro-Mechanics Co.) ;
  • Kim, Joon-Hee (Materials Research Group, Chip Component Team, Samsung Electro-Mechanics Co.) ;
  • Kim, Jong-Han (Materials Research Group, Chip Component Team, Samsung Electro-Mechanics Co.) ;
  • Hur, Kang-Heon (Materials Research Group, Chip Component Team, Samsung Electro-Mechanics Co.)
  • Published : 2003.04.01
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Abstract

Microwave dielectric characteristics and physical properties of the new Zr$_{1-x}$ (Bn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ (0.2$\leq$x$\geq$ 1.0) system have been investigated as a function of the amount of Bn$_{1}$3/Nb$_{2/3}$ $O_2$substitution. With increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content (x), two phase regions were observed: $\alpha$-Pb $O_2$ solid solution (x<0.4), mixture of the rutile type Zn$_{1}$3/Nb$_{2/3}$Ti $O_4$ and the $\alpha$-Pb $O_2$ solid solution (x$\geq$0.4). In the$\alpha$-Pb $O_2$solid solution region below x<0.4, the Q.f$_{0}$ value sharply increased and the Temperature Coefficient of the Resonant Frequency(TCF) decreased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ contents while dielectric constant (K) showed nearly same value. In the mixture region above x$\geq$4, the dielectric constant and TCF increased with increasing Bn$_{1}$3/Nb$_{2/3}$ $O_2$ content. Zr$_{1-x}$ (Zn$_{1}$3/Nb$_{2/3}$)xTi $O_4$ materials have excellent microwave dielectric properties with K=44.0, Q.f$_{0}$ : 41000 GHz and TCF =-3.0 ppm/$^{\circ}C$ at x=0.35.=0.35. x=0.35.=0.35.

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References

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