Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Effects of Oxygen Pressure on the Crystallization Behavior and Electrical Properties of YMnO3 Thin Films

  • Cheon, Chae-Il (Department of Materials Science and Engineering, Hoseo Chungnam) ;
  • Yun, Kwi-Young (Department of Materials Science and Engineering, Hoseo Chungnam) ;
  • Kim, Jeong-Seog (Department of Materials Science and Engineering, Hoseo Chungnam) ;
  • Kim, Jin-Hyeok (Department of ceramic Engineering, Chonnam National University)
  • Published : 2003.04.01
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Abstract

The YMnO$_3$ thin films were prepared on platinized-silicon substrates by chemical solution deposition and annealed at 750 to 85$0^{\circ}C$ for 1 h under various oxygen pressures, from 2 mTorr to 760 Torr. Effects of annealing oxygen pressures on the crystallization behavior and electrical properties of YMnO$_3$ thin films were investigated. Crystallinity and c-axis preferred orientation of YMnO$_3$ thin film were improved by decreasing the oxygen pressure but were deteriorated at extremely low oxygen pressure, 2 mTorr. Leakage current density of the YMn03 thin film decreased as the oxygen pressure decreased. The film annealed at 80$0^{\circ}C$ under 2 Torr, which had the best crystallinity and the highest c-axis preferred orientation. showed the best-developed ferroelectric C-V hysteresis.

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References

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