양자점 반도체광증폭기의 WDM 광통신 응용

  • 발행 : 2003.05.01

초록

키워드

참고문헌

  1. J. Kor. Phys. Soc. v.37 Optical characteristics of self-assembled InAs/GaAs quantum dots at various temperatures and excitations U.H.Lee(et al.)
  2. Electron. Lett. v.35 3.9W cw power from sub-monolayer quantum dot diode laser A.E.Zhukov(et al.)
  3. IEEE Photon. Technol. Lett. v.11 Gain and linewidth enhancement factor in InAs quantum dot laser diodes T.C.Newell(et al.)
  4. Appl. Phys. Lett. v.79 Ultrafast carrier dynamics and dephasing in InAs quantum dot amplifiers emitting near 1.3 um wavelength at room temperature P.Bori(et al.)
  5. IEEE Photon. Technol. Lett. v.14 Symmetric highly efficient(~0dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifier T.Akiyama(et al.)
  6. IEEE Photon. Technol. Lett. v.13 Room temperature operation of InAs quantum dash lasers on InP (001) R.H.Wang(et al.)
  7. ECOC'02, Copenhagen, Sept. 8-12, Post deadline paper PD3.9 Linear and non-linear characteristics of InAs/InP quantum dash optical amplifiers at 1550 nm R.Alizon(et al.)
  8. Appl. Phys. Lett. v.78 Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots W.G.Jeong;P.D.Dapkus;U.H.Lee;J.S.Yim;D.Lee;B.T.Lee
  9. Jpn. J. Appl. Phys. v.41 Optical characteristics of InAs/InGaAsP/InP self-assembled quantum dots emitting at 1.4~1.6 um U.H.Lee;J.S.Yim;D.Lee;W.G.Jeong;E.H.Hwang;D.Y.Rhee;J.S.Sim;P.D.Dapkus;B.T.Lee