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Theoretical and experimental analysis of modal gain in asymmetric multiple quantum well laser diodes

비대칭 다중 양자우물 레이저 다이오드에서 모드이득의 이론 및 실험적 분석

  • 권오기 (한국전자통신연구원 반도체 광통신소자 연구부) ;
  • 김강호 (한국전자통신연구원 반도체 광통신소자 연구부) ;
  • 김현수 (한국전자통신연구원 반도체 광통신소자 연구부) ;
  • 김종회 (한국전자통신연구원 반도체 광통신소자 연구부) ;
  • 오광룡 (한국전자통신연구원 반도체 광통신소자 연구부)
  • Published : 2003.06.01

Abstract

Wide- and flat-gain laser diodes were designed and fabricated from asymmetric multiple quantum well (AMQW) structures which consist of three compressively strained InGaAsP wells of different thicknesses. For a 400 ${\mu}{\textrm}{m}$-long lasers with as-cleaved facets, -1 ㏈ and -3 ㏈ gain bandwidth were 45 nm and 80 nm, respectively. For this AMQW structure, calculated gain spectra with various line broadening functions were compared with experimental results. We confirmed the calculated gain spectra using an asymmetric line broadening function were in good agreement with the measured data.

InGaAsP/InP 비대치 다중 양자우물 구조에서 모드 이득의 이론 및 실험적 해석을 통해 광대역 이득특성을 확인하였고, 여러가지 선폭증가 함수를 적용하여 비대칭 선폭증가 함수가 가장 실험치에 근접한 모델임을 확인하였다. 광대역 이득 대역폭을 얻기 위한 활성층 구조를 설계하여 RWG형 FP-LD를 제작하였고, 공진기 길이가 400 $\mu\textrm{m}$에서 발진개시 전류는 36 ㎃, 주입전류가 33 ㎃에서 -1 ㏈ 이득폭은 45 nm, -3 ㏈ 폭은 80 nm을 얻을 수 있었다.

Keywords

References

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