DOI QR코드

DOI QR Code

Transport and optical properties of indium tin oxide films fabricated by reactive magnetron sputtering

제작 온도 및 산소 분압에 의존하는 인듐 주석 산화물의 전기적, 광학적 성질

  • Published : 2003.06.01

Abstract

Indium tin oxide (ITO) thin films (170 nm) were grown by DC magnetron sputtering deposition on Coming glass substrates without a post annealing. The electrical transport and optical properties of the films have been investigated as a function of deposition temperature $T_{s}$ (10$0^{\circ}C$$\leq$ $T_{s}$$\leq$35$0^{\circ}C$) and oxygen partial pressure $P_{o_{2}}$, (0 $P_{o_{2}}$ $\leq$ 10$^{-5}$ torr). Films were deposited from a high density (99% of theoretical density) ITO target (I $n_2$ $O_3$: Sn $O_2$= 90 wt% : 10 wt%) made of ITO nano powders. With an increase of $T_{s}$ the electrical resistivity p of ITO thin films was found to decrease, but the mobility $\mu$$_{H}$ was found to increase. The carrier density nu shows the maximum value of 6.6$\times$10$^{20}$ /㎤ at $T_{s}$ = 30$0^{\circ}C$. At fixed Is, with an increase of the oxygen partial pressure, $n_{H}$ and $\mu$$_{H}$ were found to decrease, but p was found to increase. The minimum resistivity and maximum mobility values of the ITO films were found to be 0.3 mΩ.cm and 39.3 $\textrm{cm}^2$/V.s, respectively. The visible transmittance of the ITO films was above 80%.. 80%..

자체 제작한 고밀도(이론 밀도의 99%) ITO(I $n_2$ $O_3$:Sn $O_2$=90 wt%) 타깃과 직류 마그네트론 스퍼터링 방법을 이용하여 산소분압 $P_{o_{2}}$ (0 $P_{o_{2}}$ $\leq$$10^{-5}$ torr)와 성장 온도 Ts(10$0^{\circ}C$ $T_{s}$$\leq$35$0^{\circ}C$)를 변화시키면서 ITO 박막을 제작하고 전기적, 광학적 특성을 조사하였다. ITO박막의 비저항은 제작 온도가 증가함에 따라 감소하다가 $T_{s}$=30$0^{\circ}C$일 때 최저 비저항값 0.30 mΩ.cm를 나타내었고 $T_{s}$>30$0^{\circ}C$ 이상에서는 약간 증가하였다. $T_{s}$=30$0^{\circ}C$에서 제작한 ITO 박막의 최대 전하 농도는 6.6$\times$$10^{20}$ /㎤이었다. $T_{s}$를 고정하고 ITO 박막 제작 시 사용한 산소분압이 증가함에 따라 전하농도, 전하유동도는 급격하게 감소하여 비저항이 크게 증가하는 것으로 나타났다 ITO박막의 최저 비저항과 최대 전하 유동도는 각각 0.3 mΩ.cm와 39.3 $\textrm{cm}^2$/V.s였다. 또한 가시광 영역 (400~700 nm)에서 ITO박막의 광투과도는 80~90%로 높게 나타났다.나타났다.

Keywords

References

  1. K. L. Chopra, S. Major, and D. K. Pandya, “Transparent Conductors-A Status Review,” Thin Solid Films, vol. 102, no 1, pp. 1-35, 1983. https://doi.org/10.1016/0040-6090(83)90256-0
  2. Gee Sung Chae, “A Modified Transparent Conducting Oxide for Flat Panel Displays Only,” Jpn. J. Appl. Phys. vol 40, no 3A, pp 1282-1286, 2001. https://doi.org/10.1143/JJAP.40.1282
  3. Roy G. Gordon, “Criteria for Choosing Transparent Conductors,” MRS Bull. vol 25, no. 16, pp. 52-57, 2000.
  4. Brian G. Lewis and David C. Paine, “Applications and Processing of Transparent Conducting Oxides” MRS Bull. vol 25, no. 16, pp. 22-27 2000.
  5. David S. Ginley and Clark Bright, “Transparent Conducting Oxides,” MRS Bull. vol 25, no. 16, pp. 15-18, 2000.
  6. H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, D. B. Chrisey, “Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices,” J. Appl. Phys. vol 86, no. 11, pp. 6451-6461, 1999. https://doi.org/10.1063/1.371708
  7. Hyo-Young Yeom, Natasha Popovich, Eric Chason, David C. Paine, “A study of effect of process oxygen on stress revolution in d.c. magnetron-deposited tin-doped indium oxide,” Thin Solid Films vol 411, 17-22, 2000. https://doi.org/10.1016/S0040-6090(02)00166-9
  8. M. Yan, M. Lane, C. R. Kannewurf, and R. P. H. Chang, “Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition,” Appl. Phys. Lett. vol 78, no.16, pp. 2342-2344, 2001. https://doi.org/10.1063/1.1365410
  9. David C. Paine, T. Whitson, D. Janiac, R. Beresford, and Cleva Ow Yang, “A study of low temperature crystallization of amorphous thin film indium-tin-oxide,” J. Appl. Phys. vol 85, no. 12, pp. 8445-8450, 1999. https://doi.org/10.1063/1.370695