Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Refractive Index Control by Dopant for Thick Silica films Deposited by FHD

FHD법에 의해 증착된 실리카막의 도펀트 첨가에 의한 굴절률 제어

  • 김용탁 (성균관대학교 신소재공학과) ;
  • 서용곤 (전자부품연구원 광부품연구센터) ;
  • 윤형도 (전자부품연구원 광부품연구센터) ;
  • 임영민 (전자부품연구원 광부품연구센터) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Published : 2003.06.01
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Abstract

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

실리카 평판광회로는 다양한 광수동소자에 응용이 되고 있으며, 이를 구성하는 SiO$_2$와 GeO$_2$-SiO$_2$ 막은 화염가수분해증착에 의해 증착되었다. SiO$_2$ 막은 산-수소 토치에 SiCl$_4$, POC1$_3$와 BCl$_3$를 주입하여 화염가수반응에 의해 생성되었으며, POC1$_3$/BC1$_3$ 유량비가 증가함에 따라 P 농도는 2.0-2.8 at%까지 증가하였고, 굴절률은 1.4584-1.4605로 증가하였다. GeO$_2$-SiO$_2$ 막의 굴절률은 GeCl$_4$ 유량에 의해 제어되었으며 30-120 sccm으로 증가함에 따라 1.4615-1.4809로 증가하였다.

Keywords

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