한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제40권7호
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  • Pages.652-656
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  • 2003
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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RF 스퍼터링 방법에 의한 ZnGa2O4:Mn 박막의 성장거동과 발광특성

Growing and Luminous Characterization of ZnGa2O4:Mn Thin Film Deposited by RF Magnetron Sputtering

  • 발행 : 2003.07.01
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초록

녹색발광을 하는 스피넬 구조의 ZnGa$_2$O$_4$:Mn 형광체박막을 산소분압비를 증착변수로 이용하여 rf 마그네트론 스퍼터링법으로 증착하였으며, 증착된 박막을 산화, 진공+질소 분위기에서 각각 열처리를 하였다. 증착시 산소분압비 및 열처리시 산소분위기가 형광체 박막의 성장 및 발광특성에 미치는 영향을 관찰하였다. 열처리시 박막의 산화를 막을수록 발광특성이 향상되는 것으로 나타났다.

The green emitting phosphor, BnGa$_2$O$_4$:Mn thin films with spinel structure were deposited by rf magnetron sputtering at various Ar/O$_2$ ratios. Thin film phosphors were heat-treated in air and $N_2$+vacuum atmosphere, respectively. Effects of Ar/O$_2$ ratios and annealing conditions on the structural and photoluminescence (PL) and cathodeluminescence (CL) properties were investigated. Luminous properties were more improved by inhibiting the films from contacting with oxygen during heat treatment.

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참고문헌

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