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Room-temperature Preparation of Al2O3 Thick Films by Aerosol Deposition Method for Integrated RE Modules

  • Tsurumi, Takaaki (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology) ;
  • Nam, Song-Min (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology) ;
  • Mori, Naoko (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology) ;
  • Kakemoto, Hirofumi (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology) ;
  • Wada, Satoshi (Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology) ;
  • Akedo, Jun (National Institute of Advanced Industrial Science and Technology(AIST))
  • Published : 2003.08.01

Abstract

The Aerosol Deposition (AD) process will be proposed as a new fabrication technology for the integrated RF modules. $\alpha$-A1$_2$O$_3$ thick films were successfully grown on glass and Al substrates at room temperature by the AD process. Relative dielectric permittivity and loss tangent of the $Al_2$O$_3$ thick films on Al showed 9.5 and 0.005, respectively. To form microstrip lines on aerosol-deposited A1903 thick films, copper electroplating and lithography processes were employed, and the square-type cross section with sharp edges could be obtained. Low-pass LC filters with 10 GHz cutoff frequency were simulated by an electromagnetic analysis, exhibiting the validity of the AD process as a fabrication technology f3r integrated RF modules.

Keywords

References

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