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The structural dependence of current blocking layers on the static and dynamic performances in a direct modulated semiconductor laser

반도체 레이저의 전류 차단층 구조들이 정적 및 동적특성에 미치는 영향

  • Published : 2003.08.01

Abstract

In a direct modulated semiconductor laser diode. the structural dependence of current blocking layers was studied in view of the leakage current reduction and the bandwidth expansion. To analyze the leakage current and the parasitic effects, the current-voltage derivation characteristics and the subtraction method were used, respectively. It was shown that the‘inin’type current blocking structure might be the best choice for the purpose of the static and dynamic characteristics.

직접 변조형 반도체 레이저 다이오드에서 전류차단층의 구조들이 누설전류 및 대역폭에 미치는 영향을 조사하였다. 전류차단층을 통한 누설전류는 전류-전압미분특성 곡선을 통하여, 전류차단층의 기생성분들이 대역폭에 미치는 영향은 차감법(Subtraction method)을 사용하여 분석하였다. 실험결과로부터 정적 및 동적특성에 동시에 우수한 특성을 보이는 전류차단층 구조로서‘inin’형 차단구조가 매우 효과적임을 밝혔다.

Keywords

References

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