Journal of the Korea Institute of Information and Communication Engineering (한국정보통신학회논문지)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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A New Small-Signal Modeling Method of HEMT Using Weakly Pinched-Off Cold-HEMT

약하게 핀치오프된 Cold-HEMT를 이용한 새로운 HEMT 소신호 모델링 기법

  • 전만영 (동양대학교 정보통신공학부)
  • Published : 2003.08.01
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Abstract

By biasing the gate of cold-HEMT with a voltage slightly lower than the pinch-off point, a new small-signal modeling method that is free from gate degradation problem and requires no additional DC measurement is proposed in this paper. The method has shown excellent agreement between modeled and measured S-parameters up to 62 GHz at 49 different normal operating bias points.

본 논문에서는, cold-HEMT의 게이트에 핀치오프 전압보다 약간 낮은 전압을 가함으로써 게이트 손상문제로부터 자유로우며 부가적인 DC 측정을 필요로 하지 않는 새로운 HEMT 소신호 모델링 방법을 제시한다. 제시된 방법에 의해서 모델링된 회로의 S-파라미터 이론치는 49개의 동작 바이어스점에서 측정치와 62GHz까지 뛰어난 일치를 보였다.

Keywords

References

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