Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Dry Etching of GaAs and AlGaAs Semiconductor Materials in High Density BCl3and BCl3/Ar Inductively Coupled Plasmas

BCl3및 BCl3/Ar 고밀도 유도결합 플라즈마를 이용한 GaAs와 AlGaS 반도체 소자의 건식식각

  • Lim, Wan-tae (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) ;
  • Baek, In-kyoo (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) ;
  • Lee, Je-won (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) ;
  • Cho, Guan-Sik (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications) ;
  • Jeon, Min-hyun (School of Nano Engineerings, Inje University/ Institute of Nano-Technology Applications)
  • 임완태 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 백인규 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 이제원 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 조관식 (인제대학교 나노공학부/나노기술 응용연구소) ;
  • 전민현 (인제대학교 나노공학부/나노기술 응용연구소)
  • Published : 2003.10.01
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Abstract

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

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References

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