Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characteristics of NiCr Thin Films Prepared by rf Magnetron Sputtering as Absorption Layer for Infrared Sensors

적외선 센서를 위해 흡수층으로서 rf Magnetron Sputtering에 의해 제조된 NiCr 박막의 특성

  • Hur, Sung-Gi (Department of Materials Engineering, Chungnam National University) ;
  • Choi, Eun-Suck (Department of Materials Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
  • Published : 2003.10.01
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Abstract

NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O$_3$(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at $600^{\circ}C$ for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at $V^{\circ}C$ in oxygen ambient were about 2$0\AA$ and $70 \mu$Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at $500^{\circ}C$ in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20$\mu$C/$\textrm{cm}^2$. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.

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