Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Heavy Carbon Incorporation into High-Index GaAs

고농도로 탄소 도핑된 높은 밀러 지수 GaAs

  • 손창식 (신라대학교 공과대학 광전자공학과)
  • Published : 2003.11.01
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Abstract

Heavily $p^{ ＋}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.

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