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DC Characteristics of AlGaN/GaN HFETs Using the Modeling of Piezoelectric and Thermal Effects

Piezoelectric효과와 열 효과 모델링을 고려한 AlGaN/GaN HFET의 DC 특성

  • Park, Seung-Wook (ChipPAC KOREA) ;
  • Hwang, Woong-Joon (Semiconductor Materials/Devices Lab., Department of Ceramic Engineering, Myong Ji University) ;
  • Shin, Moo-Whan (Semiconductor Materials/Devices Lab., Department of Ceramic Engineering, Myong Ji University)
  • 박승욱 (칩팩코리아) ;
  • 황웅준 (명지대학교 세라믹공학과 반도체 재료/소자 연구실) ;
  • 신무환 (명지대학교 세라믹공학과 반도체 재료/소자 연구실)
  • Published : 2003.12.01

Abstract

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

Keywords

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