Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effects of Deposition Conditions on the Properties of Amorphous Carbon Nitride Thin Films by PECVD

PECVD로 제조된 비정질 질화탄소 박막의 특성에 미치는 증착변수의 영향

  • Moon, Hyung-Mo (Dept. of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kim, Sang-Sub (Photonic and Electronic Thin Film Laboratory, Dept. of Materials Science and Engineering, Chonnam National University)
  • 문형모 (순천대학교 재료금속공학과) ;
  • 김상섭 (전남대학교 신소재공학부 광ㆍ전자박막연구실)
  • Published : 2003.03.01
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Abstract

Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

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