Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Characterizing the Thermal Stability of TiSi2 Film by Using the Statistical Experimental Method

통계적 실험 방법을 이용한 티타늄실리사이드의 열적안정성 연구

  • Cheong, Seong-Hwee (Department of Materials Science and Engineering, The University of Seoul) ;
  • Song, Oh-Sung (Department of Materials Science and Engineering, The University of Seoul)
  • 정성희 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Published : 2003.03.01
Download PDF
⟨ Previous Next ⟩

Abstract

A statistical experiment method was employed to investigate the window of the thermal stability of $TiSi_2$films which are popular for Ti-salicide and ohmic layers. The statistical experimental results showed that the first order term of $TiSi_2$thickness and annealing temperature was acceptable as a function of $\Delta$resistivity by 95% reliability criteria, and R-sq value implying a fit accuracy of the model also showed a high value of 93.80%. We found that $\Delta$resistivity of the $TiSi_2$film annealed at $700^{\circ}C$ for 1 hr changed from 3.35 to $0.379\mu$$\Omega$$\cdot$cm with increasing thickness from 185 to $703\AA$, and TEX>$\Delta$resistivity of the $TiSi_2$film with a fixed thickness of 444 $\AA$ changed from 0.074 to 17.12 $\mu$$\Omega$$\cdot$cm with increasing temperature increase from 600 to $800^{\circ}C$. From these results, we report that the process conditions of$ 692^{\circ}C$-1 hr, $715^{\circ}C$-1 hr, and 73$0^{\circ}C$-1 hr for $TiSi_2$($400 \AA$) are stable by the criteria of 1, 2, and 3 $\mu$$\Omega$$\cdot$cm of $\Delta$resistivity, respectively.

Keywords

References

  1. J. Y. Dai, Z. R. Guo, S. F. Tee, C. L. Tay, E. Er, and S. Redkar, Appl. Phys. Lett., 78, 3091 (2001) https://doi.org/10.1063/1.1372621
  2. J. Prokop, C. E. Zybill, and S. Veprek, Thin Solid Films, 359, 39 (2000) https://doi.org/10.1016/S0040-6090(99)00654-9
  3. C. Detavernier, R. L. V. Meirhaeghe, and F. Cardon, J. Appl. Phys., 88, 133 (2000) https://doi.org/10.1063/1.373633
  4. C. M. Osburn, J. Y. Tsai and J. Sun, J. Electron Material, 25, 1725 (1996) https://doi.org/10.1007/s11664-996-0028-x
  5. J. Chen, J. P. Colinge, D. Flandre, R. Gillon, J. P. Raskin, and D. Vanhoenacker, J. Electrochem. Soc., 144(7), (1997) https://doi.org/10.1149/1.1837833
  6. J. J. Sun, J. Y. Tsai, and C. M. Osburn, IEEE Trans. Electron Devices, 45(9), 1946 (1998) https://doi.org/10.1109/16.711360
  7. F. Hong, G. A. Rozgonyi, and B. K. Patnaik, Appl. Phys. Lett., 61, 1519 (1992) https://doi.org/10.1063/1.108465
  8. F. Hong and G. A. Rozgonyi, J.Electrochem. Soc., 141, 3480 (1994) https://doi.org/10.1149/1.2059357
  9. C. Y. Kang, D. G. Kang, and J. W. Lee, J. Appl. Phys., 86, 5293 (1999) https://doi.org/10.1063/1.371513
  10. J. Lutze, G. Scott, and M. Manley, IEEE Electron Device Lett., 21, 155 (2000) https://doi.org/10.1109/55.830966
  11. H. Fang, M. C. Oztu, E. G. Seebauer, and D. E. Batchelor, J. Electrochem. Soc., 146, 4240 (1999) https://doi.org/10.1149/1.1392621
  12. C. G. Bucher, and U. Bourgund, Structural Safety, 7, 57 (1990) https://doi.org/10.1016/0167-4730(90)90012-E
  13. A. H. Langner, E. N. Loredo, D. C. Montgomery, A. H. Griffin, Robotics and Computer Integrated Manufacturing, 16, 377 (2000) https://doi.org/10.1016/S0736-5845(00)00016-8