Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Microstructures and Electrical Properties of Niobium-doped Bi4Ti3O12 Thin Films Fabricated by a Sol-gel Route

졸-겔 법으로 성장시킨 Nb가 첨가된 Bi4Ti3O12 박막의 미세구조와 전기적 성질

  • Kim, Sang-Su (Department of Physics, Changwon National University) ;
  • Jang, Ki-Wan (Department of Physics, Changwon National University) ;
  • Han, Chang-Hee (Department of Physics, Changwon National University) ;
  • Lee, Ho-Sueb (Department of Physics, Changwon National University) ;
  • Kim, Won-Jeong (Department of Physics, Changwon National University) ;
  • Choi, Eun-Kyung (Department of Physics, Changwon National University) ;
  • Park, Mun-Heum (Department of Physics, Changwon National University)
  • 김상수 (창원대학교 자연과학대학 물리학과) ;
  • 장기완 (창원대학교 자연과학대학 물리학과) ;
  • 한창희 (창원대학교 자연과학대학 물리학과) ;
  • 이호섭 (창원대학교 자연과학대학 물리학과) ;
  • 김원정 (창원대학교 자연과학대학 물리학과) ;
  • 최은경 (창원대학교 자연과학대학 물리학과) ;
  • 박문흠 (창원대학교 자연과학대학 물리학과)
  • Published : 2003.05.01
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Abstract

Bismuth layered structure ferroelectric thin films, $Bi_4$$Ti_3$$O_{12}$ / (BTO) and Nb-doped BTO (BTN) were prepared on the Pt(111)/Ti/$SiO_2$/Si(100) substrates by a sol-gel route. We investigated the Nb-doping effect on the grain orientation and ferroelectric properties. $Nb^{5＋}$ ion substitution for $Ti^{4＋}$ ion in perovskite layers of BTO decreased the degree of c-axis orientation and increased the remanent polarization (2Pr). The fatigue resistance of Nb-doped BTO thin film was shown to be superior to that of BTO, and the leakage current of Nb-doped BTO thin film was decreased about 1 order of magnitude compared with BTO. The improvement of ferroelectric properties with $Nb^{5＋}$ doping in BTO could be attributed to the changes in space charge densities and grain orientation in the thin film.

Keywords

References

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