Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effects of Ti-capping Layers on the Thermal Stability of NiSi

Ti-capping층이 NiSi의 열적안정성에 미치는 영향

  • Park, Soo-Jin (Department of Electronic Materials Engineering, The University of Suwon) ;
  • Lee, Keun-Woo (Department of Electronic Materials Engineering, The University of Suwon) ;
  • Kim, Ju-Youn (Division of Materials Engineering, Hanyang University) ;
  • Jun, Hyung-Tak (Division of Materials Engineering, Hanyang University) ;
  • Bae, Kyoo-Sik (Department of Electronic Materials Engineering, The University of Suwon)
  • 박수진 (수원대학교 전자재료공학과) ;
  • 이근우 (수원대학교 전자재료공학과) ;
  • 김주연 (한양대학교 재료공학부) ;
  • 전형탁 (한양대학교 재료공학부) ;
  • 배규식 (수원대학교 전자재료공학과)
  • Published : 2003.07.01
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Abstract

Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.

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References

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