Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Formation of Vanadium-based Ohmic Contacts to n-GaN

n-GaN/vanadium-based Ohmic 접촉 형성

  • Song, June-O (Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST)) ;
  • Leem, Dong-Seok (Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST)) ;
  • Kim, Sang-Ho (Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST)) ;
  • Seong, Tae-Yeon (Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST))
  • 송준오 (광주과학기술원 신소재공학과) ;
  • 임동석 (광주과학기술원 신소재공학과) ;
  • 김상호 (광주과학기술원 신소재공학과) ;
  • 성태연 (광주과학기술원 신소재공학과)
  • Published : 2003.09.01
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Abstract

We investigate vanadium (V)-based Ohmic contacts on n-GaN ($N_{d}$=$2.0${\times}$10^{18}$ $cm^{-3}$ ) as a function of annealing temperature. It is shown that the V (60 nm) contacts become Ohmic with specific contact resistances of $10^{-3}$ $- 10^{-4}$ Ω$\textrm{cm}^2$ upon annealing at 650 and $850^{\circ}C$. The V(20 nm)/Ti(60 nm)/Au(20 nm)contacts produce very low specific contact resistances of $2.2 ${\times}$ 10^{-5}$ and$ 4.0${\times}$10^{-6}$ Ω$\textrm{cm}^2$ when annealed at 650 and $850{\circ}C$, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving Ohmic property. Based on the current-voltage measurement, Auger electron spectroscopy, glancing angle X-ray diffraction, and X-ray photoemission spectroscopy results, the possible mechanisms for the annealing temperature dependence of the Ohmic behavior of the V-based contacts are described and discussed.d.

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References

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