Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Optimization of TEM Sample Preparation for the Microstructural Analysis of Nitride Semiconductors

질화물 반도체의 미세구조 분석을 위한 최적의 TEM 시편 준비법

  • Cho, Hyung-Koun (Department of Metallurgical Engineering, Dong-A University) ;
  • Kim, Dong-Chan (Department of Metallurgical Engineering, Dong-A University)
  • 조형균 (동아대학교 공과대학 금속공학과) ;
  • 김동찬 (동아대학교 공과대학 금속공학과)
  • Published : 2003.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

The optimized conditions for the cross-sectional TEM sample preparation using tripod polisher and ion-beam miller was confirmed by AFM and TEM. For the TEM observation of interfaces including InGaN layers like InGaN/GaN MQW structures, the sample preparation by the only tripod polishing was useful due to the reduction of artifacts. On the other hand, in case of the thick nitride films like ELO, PE, and superlattice, both tripod polishing and controlled ion-beam milling were required to improve the reproducibility. As a result, the ion-beam milling with the $60^{\circ}$modulation showed the minimum height difference between film and sapphire interface and the ion-beam milling of the $80^{\circ}$modulation showed the broad observable width.

Keywords

References

  1. S. Nakamura and G. Fasol, The Blue Laser Diode, Sringer, Berlin, 1997
  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, H. Kiyoko and Y. Sukimoto, Jpn. J. Appl. Phys., 35, L217 (1996) https://doi.org/10.1143/JJAP.35.L217
  3. S. C. Binari and H. C. Dietrich, in 'GaN and Related Materials', edited by S. J. Pearton (Gordon and Breach, New York, 1997). pp. 509-534
  4. J. E. Northrup and L. T. Romano, in 'Gallium Nitride and Related Semiconductors', edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel (INSPEC, Stevenage, U.K., 1999), Vol. 23, Chap. A7.2, pp. 213-220
  5. Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura, Appl. Phys. Lett., 70, 981 (1997) https://doi.org/10.1063/1.118455
  6. S. Tomiya, K. Funato, T. Asatsuma, T. Hino, S. Kijima, T. Asano and M. Ikeda, Appl. Phys. Lett., 77, 636 (2000) https://doi.org/10.1063/1.127069
  7. C. I. H. Ashby, C. C. Mitchell, J. Han, N. A. Missert, P. P. Provencio, D. M. Follstaedt, G. M. Peake and L. Griego, Appl. Phys. Lett., 77, 3233 (2000) https://doi.org/10.1063/1.1325394
  8. P. H. Chang, M. D. Coviello and A. F. Scott, Mater. Res. Soc. Symp. Proc., 115, 93 1988)
  9. J. P. Benedict, R. M. Anerson and S. J. Klepeis, Mater. Res. Soc. Symp. Proc., 523, 19 (1998)
  10. S. Yu. Karpov, MRS Internet J. Nitride Semicond. Res., 3, 16 (1998) https://doi.org/10.1557/S1092578300000880
  11. Y. Arakawa and H. Sakaki, Appl. Phys. Lett., 40, 939 (1982) https://doi.org/10.1063/1.92959