JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET's

  • Jit, S. (Department of Electronics Engineering Institute of Technology Banaras Hindu University) ;
  • Pandey, Prashant (Department of Electronics Engineering Institute of Technology Banaras Hindu University) ;
  • Pal, B.B. (Department of Electronics Engineering Institute of Technology Banaras Hindu University)
  • Published : 2003.12.01
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Abstract

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

Keywords

References

  1. H. Vogt, G. Burbach, J. Belz, and G. Zimmer, 'MESFET's in thin silicon on SIMOX,' Electron Lett., vol.25, no. 23, pp.1580-1581, 1989
  2. Chin-Shan Hou, and Ching-Yuan Wu, '2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFET's,' IEEE Trans. Electron Devices, vol.42, no.12, pp.2156-2161, 1995 https://doi.org/10.1109/16.477774
  3. T.K. Chiang, Y.H. Wang, and M.P.Houng, 'Modeling of threshold voltage and subthreshold swing of short-channel SOl MESFET's,' Solid State Electron., vol.43, pp.123-l29,1999 https://doi.org/10.1016/S0038-1101(98)00240-8
  4. K.K. Young, 'Short-channel effect in fully depleted SOl MOSFET's,' IEEE Trans. Electron. Devices, vol.36, no.2, 1989 https://doi.org/10.1109/16.19942
  5. T.Toyabe and S. Asai, 'Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis,' IEEE J. Solid-State Circuits, vol. SC-14, pp.375-383, 1979 https://doi.org/10.1109/JSSC.1979.1051188
  6. J. D. Marshal, and J. D. Meindl, ' An analytical two-dimensional model for silicon MESFET's,' IEEE Trans. Electron Devices, vol.35, no.3, pp.373-383, 1988 https://doi.org/10.1109/16.2464