Excimer-Laser Annealing for Low-Temperature Poly-Si TFTs

  • Kim, Hyun-Jae (LCD R&D Center, AMLCD Division, Samsung Electronics)
  • Published : 2003.12.21


For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a-Si) films are significant factors contributing to the final microstructure and the performance of low-temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a-Si) films and process conditions are yet to be optimized.



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