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Thick Films of LaNiO3 Perovskite Structure Impregnated with In and Bi Oxides as Acetonitrile Sensor

  • Salker, A.V. (School of Electronic and Electrical Engineering, Goa University) ;
  • Choi, Nak-Jin (Department of Electronic Engineering, Kyungpook National University) ;
  • Kwak, Jun-Hyuk (Department of Electronic Engineering, Kyungpook National University) ;
  • Lee, Duk-Dong (Department of Electronic Engineering, Kyungpook National University)
  • Published : 2004.07.31

Abstract

Thick films of $LaNiO_{3}$ having perovskite structure impregnated with indium and bismuth oxides have been used as sensing material for acetonitrile ($CH_{3}CN$) gas. The sensor response for $CH_{3}CN$ is quite good with an excellent recovery for partial pressure from 3 ppm to 20 ppm between 200 and $250^{\circ}C$. $LaNiO_{3}$ alone has exhibited low response, but after impregnation of $In_{2}O_{3}$ and $Bi_{2}O_{3}$ have given increased sensitivity even with 3 ppm partial pressure of $CH_{3}CN$ at $200^{\circ}C$. It is assumed that $CH_{3}CN$ is undergoing oxidation reaction on surface of the film.

Keywords

References

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