DOI QR코드

DOI QR Code

High Performance of SWIR HgCdTe Photovoltaic Detector Passivated by ZnS

  • Lanh, Ngoc-Tu (Thin Film Materials Research Center, Korea Institute of Science and Technology) ;
  • An, Se-Young (Thin Film Materials Research Center, Korea Institute of Science and Technology) ;
  • Suh, Sang-Hee (Center for Nanostructure Materials Technology, 21C Frontier R&D Program, Korea Institute of Science and Technology) ;
  • Kim, Jin-Sang (Thin Film Materials Research Center, Korea Institute of Science and Technology)
  • Published : 2004.03.31

Abstract

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

Keywords

References

  1. Shin S.H. Pasko J.G., and Cheung D.T., 'High Speed Photodetectors', Proc. SPlE., vol. 272, pp. 27, 1981 https://doi.org/10.1117/12.965688
  2. Vural K., 'SWIR HgCdTe Focal Plane Arrays for Astronomy', Opt. Eng., vol. 26, pp. 201, 1987
  3. Botts S.E. IEEE Trans. Electron Devices, vol. 32, pp. 1584, 1985 https://doi.org/10.1109/T-ED.1985.22167
  4. P.H. Zimmermann, M.B. Reine, and K. Spignese 'Surface Passivation of HgCdTe Photodiodes', J. Vac. Sci. Tech. A, vol. 8, no. 2, pp. 1182, 1990 https://doi.org/10.1116/1.576941
  5. G. Saruri et aI., 'Application of CdTe Epitaxial Layers for Passivation of p-type HgO.77Cd0.23Te', J. Apply. Phys., vol. 71, no. 10, pp. 15, 1992 https://doi.org/10.1063/1.350730
  6. Y. Nemirovski and G. Bahir, 'Passivation of Mercury Cadmium Telluride Surfaces', J. Vac. Sci. Tech. A, vol. 7, no. 2, pp. 1185, 1989
  7. S.H. Suh et al., 'Passivation of HgCdTe p-n Diode Junction by Compositionally Graded HgCdTe Formed by Annealing in a CdlHg Atmosphere', Journal of Electronic Materials, vol. 31, no. 7, 2002
  8. Jin-sang Kim et aI., 'Characteristics of SWIR Diodes of HgCdTe/CdTe/GaAs Grown by Metal Organic Vapor Phase Epitaxy', Phys. Stat. Sol. B, vol. 229, no. 2, pp. 1089, 2002 https://doi.org/10.1002/1521-3951(200201)229:2<1089::AID-PSSB1089>3.0.CO;2-2
  9. J. Tunniicliff, S.J., C. Irvine, O.D. Dosser, and JB. Mullin, 'A New MOVPE Technique for the Growth of Highly Uniform CMT', J. Cryst. Growth, vol.68, pp. 245, 1984 https://doi.org/10.1016/0022-0248(84)90423-8
  10. Jong-Hyeong Song, Je-Won Kim, Mann-Jang Park, Jin-Sang Kim, Kwan-Uk Jung, and Sang-Hee Suh, 'Iodine and Arsenic Doping of (lOO)HgCdTe/GaAs Grown by Meta10rganic Vapor Phase Epitaxy Using Isopropyl Iodide and Tris-dimethy1aminoarsenic', J. Cryst. Growth, vol. 184, pp. 1232, 1998
  11. E. Finkman and S.E. Schacham, 'The Exponential Optical Absorption Band Tail of Hgl_xCdxTe', J. Appl. Phys., vol. 56, pp. 2896, 1984 https://doi.org/10.1063/1.333828

Cited by

  1. LET Calibration of Fe 500 MeV/u Ions using SSNTD vol.25, pp.1, 2016, https://doi.org/10.5369/JSST.2016.25.1.41