Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)
- Volume 11 Issue 4 Serial No. 33
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- Pages.29-35
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- 2004
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- 1226-9360(pISSN)
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- 2287-7525(eISSN)
[ $NH_3$ ] Pulse Plasma Treatment for Atomic Layer Deposition of W-N Diffusion Barrier
암모니아 펄스 플라즈마를 이용한 원자층 증착된 질화텅스텐 확산방지막 특성
- Lee, Chang-Woo (Nano & Electronic Physics, Kookmin University)
- 이창우 (국민대학교 나노전자물리학과)
- Published : 2004.12.01
Abstract
We have deposited the W-N diffusion barrier on Si substrate with
암모니아 펄스플라즈마를 이용하여