ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications

  • Received : 2004.03.21
  • Published : 2004.10.31
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Abstract

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

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References

  1. IEEE Photon. Technol. Lett. v.12 no.10 Application of Spectral-Hole Burning in the Inhomogeneously Broadened Gain of Self-Assembled Quantum Dots to a Multiwavelength-Channel Nonlinear Optical Device Akiyama, T.;Kuwatsuka, H.;Simoyama, T.;Nakata, Y.;Mukai, K.;Sugawara, M.;Wada, O.
  2. Appl. Phys. Lett. v.78 no.21 Energy Level Control for Self-Assembled InAs Quantum Dots Utilizing a Thin AlAs Layer Kim, J.S.;Yu, P.W.;Leem, J.Y.;Lee, J.I.;Noh, S.K.;Kim, J.S.;Kim, S.M.;Son, J.S.;Lee, U.H.;Yim, J.S.;Lee, D.
  3. IEEE J. Quantum Electron. v.QE-22 no.9 Gain and the Threshold of Three-Dimensional Quantum-Box Lasers Asada, M.;Miyamoto, Y.;Suematsu, Y.
  4. Appl. Phys. Lett. v.79 no.22 High-Performance InAs Quantum-Dot Lasers near 1.3 ${\mu}m$ Qiu, Y.;Gogna, P.;Forouhar, S.;Stintz, A.;Lester, L.F.
  5. Electron. Lett. v.36 no.20 InAs Quantum-Dot Lasers Operating near 1.3 ${\mu}m$ with High Characteristic Temperature for Continuous-Wave Operation Chen, H.;Zou, Z.;Shchekin, O.B.;Deppe, D.G.
  6. Appl. Phys. Lett. v.68 no.7 InAs Self-Assembled Quantum Dots on InP by Molecular Beam Epitaxy Fafard, S.;Wasilewski, Z.;McCaffrey, J.;Raymond, S.;Charbonneau, S.
  7. Semicond. Sci. Technol. v.13 no.1 High Photoluminescence Efficiency of InAs/InP Self-Assembled Quantum Dots Emitting at 1.5-1.6 ${\mu}m$ Larmbart, B.;Le Corre, A.;Drouot, V.;L'Haridon, H.;Loualiche, S.
  8. IEEE Photon. Technol. Lett. v.13 no.13 Room-Temperature Operation of InAs Quantum-Dash Lasers on InP (001) Wang, R.H.;Stintz, A.;Varangis, P.M.;Newell, T.C.;Li, H.;Malloy, K.J.;Lester, L.F.
  9. IEEE Photon. Technol. Lett. v.14 no.6 Long-Wavelength InP-Based Quantum-Dash Lasers Schwertberger, R.;Gold, D.;Reithmaier, J.P.;Forchel, A.
  10. J. Crystal Growth v.251 no.1-4 Epitaxial Growth of 1.55 ${\mu}$m Emitting InAs Quantum Dashes on InP-Based Heterostructures by GS-MBE for Long-Wavelength Laser Applications Schwertberger, R.;Gold, D.;Reithmaier, J.P.;Forchel, A.
  11. Appl. Phys. Lett. v.78 no.3 Ground-State Lasing at Room Temperature in Long-Wavelength InAs Quantum-Dot Lasers on InP (311)B Substrates Saito, H.;Nishi, K.;Sugou, S.
  12. J. Crystal Growth v.251 no.1-4 Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: towards a 1.55 ${\mu}m$ Quantum Dot Laser Paranthoen, C.;Platz, C.;Moreau, G.;Bertru, N.;Dehaese, O.;Le Corre, A.;Miska, P.;Even, J.;Folliot, H.;Labbe, C.;Patriarche, G.;Simon, J.C.;Loualiche, S.
  13. Appl. Phys. Lett. v.80 no.19 InAs Self-Assembled Quantum-dot Lasers Grown on (100) InP Allen, C.Ni.;Poole, P.J.;Marshall, P.;Fraser, J.;Raymond, S.;Fafard, S.
  14. J. Crystal Growth v.259 no.3 Formation of Self-Assembled InAs Quantum Dots on InAl(Ga)As/InP and Effects of a Thin GaAs Layer Kim, J.S.;Lee, J.H.;Hong, S.U.;Han, W.S.;Kwack, H.S.;Lee, C.W.;Oh, D.K.
  15. Appl. Surface Science v.162-163 no.1 Staggered Vertical Self-Organization of Stacked InAs/InAlAs Quantum Wires on InP (001) Brault, J.;Gendry, M.;Pitaval, M.;Olivares, J.;Grenet, G.;Hollinger, G.
  16. Phys. Rev B v.58 no.16 Effects of Interface-Layers Composition and Strain Distribution on the Optical Transitions of InAs Quantum Dots on InP Folliot, H.;Loualiche, S.;Lambert, B.;Drouot, V.
  17. Appl. Phys. Lett. v.81 no.2 Correlation between the Gain Profile and the Temperature-Induced Shift in Wavelength of Quantum-Dot Lasers Klopf, F.;Deubert, S.;Reithmaier, J.P.;Forchel, A.