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Transparent Conducting Zinc-Indium Oxides Thin Films by an Electron Beam Evaporation Method

  • Lee, Choon-Ho (Department of Materials Engineering, College of Engineering, Keimyung University) ;
  • Kim, Sun-Il (Department of Materials Engineering, College of Engineering, Keimyung University)
  • Published : 2004.01.01

Abstract

ZnO-In$_2$O$_3$ films were fabricated on Corning 1737 glass substrate by an electron beam evaporation technique and their characteristics were investigated. The composition of ZnO-In$_2$O$_3$ films had a marked effect on the electrical properties of the films. The ZnO-In$_2$O$_3$ films showed superior transparent-conducting characteristics with increase of Zn content. The resistivity and carrier concentration of the film having Zn content of 45 at% are 4.45${\times}$10$^{-3}$ cm and 3.1${\times}$10$^{19}$ cm$^{-3}$ , respectively. Also, the transmittance was higher than 80% throughout the visible range. The average roughness of the film was 14.6 $\AA$ in terms of root mean square.

Keywords

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