Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth and characterization of amorphous GaN film using a pulsed-laser ablation

펄스 레이저 어블레이션을 이용한 비정질 GaN박막의 성장 및 특성분석

  • 심승환 (한양대학교, 세라믹공정연구센터, 세라믹공학과) ;
  • 윤종원 ;
  • ;
  • 심광보 (한양대학교, 세라믹공정연구센터, 세라믹공학과)
  • Published : 2004.02.01
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Abstract

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

고밀도 GaN 타겟의 레이저 어블레이션으로 상온에서 비정질 GaN 박막을 제조하였다. 다양한 Ar 압력 및 레이저 에너지로 증착된 박막의 표면미세구조 및 조성분석 결과, 10Pa의 압력하에 증착된 박막은 smooth한 표면을 갖는 비정질 GaN로 구성되었음을 확인하였으며, 특히 200mJ/pu1se로 증착된 박막은 저 에너지에서 증착된 박막과 비교하여 결정성의 증가 및 화학양론에 가까운 조성을 나타냈다. 상온 photoluminescence spectra로부터 비정질 GaN 박막은 약 2.8eV에서 강한 band gap발광특성이 관측되었으며, 200mJ/pu1se의 10 Pa에서 가장 높은 발광효율을 나타냈다.

Keywords

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