Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Analytical Modeling for Dark and Photo Current Characteristics of Short Channel GaAs MESFETs

단채널 GaAs MESFET의 DC특성 및 광전류 특성의 해석적 모델에 대한 연구

  • 김정문 (제주산업정보대학 정보통신과) ;
  • 서정하 (홍익대학교 전자전기공학부)
  • Published : 2004.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, an analytical modeling for the dark and photo-current characteristics of a buried-gate short- channel GaAs MESFET is presented. The presented model shows that the increase of drain current under illumination is largely due to not the increase of photo-conductivity in the neutral region but the narrowing effect of the depletion layer width. The carrier density profile within the neutral region is derived from solving the carrier continuity equation one-dimensionally. In deriving the photo-generated current, we assume that the photo-current is compensated with the thermionic emission current at the gate-channel interface. Moreover, the two-dimensional Poisson's equation is solved by taking into account the drain-induced longitudinal field effect. In conclusion, the proposed model seems to provide a reasonable explanation for the dark and photo current characteristics in a unified manner.

본 연구는 게이트 매몰형 단채널 GaAs MESFET의 암전류 특성과 광전류 특성을 해석적으로 모델링하였다. 모델링 결과, 광조사에 의한 중성영역내의 광 전도도의 증가 보다 공핍층 내의 광 기전력 발생에 따른 공핍층 폭의 감소효과로 인한 드레인 전류의 증가가 크게 일어남을 보이고 있다. 중성영역의 케리어 밀도 변화는 1차원 케리어 연속 방정식으로부터 도출하였으며, 광 기전력 도출은 게이트-공핍층 경계면의 광전류와 열전자 방출전류가 상쇄되는 조건으로 도출하였다. 드레인전압 인가에 따른 단채널 소자의 채널 방향의 전계효과를 고려한 2차원 Poisson 방정식의 해법을 제안하였다. 모델링 결과를 시뮬레이션한 결과, 적절한 암전류 및 광전류 특성에 대한 통합적 모델이 얻어짐을 확인하였다.

Keywords

References

  1. M. A. Itzler, C. S. Wang, S. McCoy, N. Codd, and N. Komaba, ECOC'98, 1998
  2. I. Watanabe, T. Nakata, M. Tsuji, K. Makita, T. Torikai, and K. Taguchi, J. Lightwave Tech., vol.18, no.12, 2000 https://doi.org/10.1109/50.908834
  3. S. Bose, M. Gupta, R.s. Gupta, 'Cut-off frequency and optimum noise figure of GaAs optically controlled FET', Microwave Opt. Technol. Lett. vol.26, no.5, pp.276-282, 2000 https://doi.org/10.1002/1098-2760(20000905)26:5<279::AID-MOP1>3.0.CO;2-0
  4. C. Baack, G. Elze, and W. Wolf, 'GaAs MESFET : A high speed optical detector,' Electron Lett., vol. 13, p.193, July.1977 https://doi.org/10.1049/el:19770141
  5. J. C. Gammel and J. M. Ballantyne, 'The OPFET : A new high speed optical detector,' in IEEE Int. Electron Device Meeting Dig., Washington, DC, Dec. 1978, pp. 120-123
  6. J. Graffeuil, P. Rossel, and H. Martinot, 'Light induced effects in GaAs FET's,' Electron Lett., vol. 15, pp.439-441, July 1979 https://doi.org/10.1049/el:19790315
  7. P. Sugete and Y. Mizushima, 'High speed photoresponse mechanism of GaAs MESFET,' Jpn. J. Appl. Phys., vol.19, pp. L27-L29, 1980 https://doi.org/10.1143/JJAP.19.L27
  8. A. A. De Salles and J. R. Forrest, 'Initial observations of optical injection locking of GaAs metal semiconductor field-effect transistor oscillators,' Appl. Phys. Lett., vol.38, pp.392-394, Mar. 1981 https://doi.org/10.1063/1.92350
  9. A. A. A. de Salles, 'Optical Control of GaAs MESFET's,' IEEE Trans. Microw. Theory Tech., vol.MTT-31, pp.812-820, Oct.1983
  10. H. Mizuno, 'Microwave characteristics of an optically controlled GaAs MESFET,' IEEE Trans. Microwave Theory Tech., vol. MTT-31, pp. 567-600, July 1983
  11. G. J. Chaturvedi, R. L. Purohit, and S. L. Sharma, 'Optical effect on GaAs MESFET's', Infrared Phys., vol.23, pp.65-68, Jan.1983 https://doi.org/10.1016/0020-0891(83)90014-3
  12. R. N. Simons, 'Microwave performance of an optically controlled AlGaAs/GaAS high electron mobility transistor and GaAs MESFET,' IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp.1444-1455, Dec. 1987
  13. R. N. Simons and K. B. Bashin, 'Analysis of optically controlled microwave/millimeter wave device structures,' IEEE Trans. Microwave Theory Tech., Vol. 34, pp.1349-1355, Dec.1986 https://doi.org/10.1109/TMTT.1986.1133548
  14. R. B. Darling and J. P. Uyemura, 'Optical gain and Large signal characteristics of illuminated GaAs MESFET', IEEE J. Quantum Electron., vol. QE-23, pp.1160-1171, July. 1987
  15. Shubha, B. B. Pal, and R. U. Khan, 'Optically controlled ion-implanted GaAs MESFET characteristics with opaque gate,' IEEE Trans. Electron Devices , vol. 45, pp.78-84, Jan.1998 https://doi.org/10.1109/16.658814
  16. A. A. A. de Salles, 'Optical Control of GaAs MESFET's,' IEEE Trans. Microw. Theory Tech., vol.MTT-31, pp.812-820, Oct.1983
  17. N. S. Ray, B. B. Pal, and R. U. Khan, 'Analysis of GaAs OPFET with improved optical absorption under back illumination,' IEEE Trans. Electron Devices, vol. 46, pp.2350-2353, Dec. 1999 https://doi.org/10.1109/16.808081
  18. V. K. Singh, S. N. Chattopadhyay, and B. B. Pal, 'Optically controlled characteristics of an ion-implanted silicon MESFET,' Solid State Electron., vol. 29, pp. 707-711, Aug. 1986 https://doi.org/10.1016/0038-1101(86)90156-5
  19. P. Chakrabarti, 'Comment of effect of radiation and surface recombination of an ion-implanted GaAs MESFET,' IEEE Trans. Electron Devices, vol. 38, P.2578, Nov. 1991 https://doi.org/10.1109/16.97431
  20. P. Chakrabarti, 'Comment of effect of radiation and surface recombination of an ion-implanted GaAs MESFET,' IEEE Trans. Electron Devices, vol. 38, P.2578, Nov. 1991 https://doi.org/10.1109/16.97431
  21. P. Chakrabarti, R. Anand, and V. S. Rao, 'I-Vcharacteristics of an optically controlled Si-MESFET Solid State Electron., vol. 35, pp.587-592, Apr. 1992 https://doi.org/10.1016/0038-1101(92)90124-U
  22. P. Chakrabarti, N. L. Shrestha, S. Srivastava, and V.Khemka, 'An improved model of an ion implanted OPFET,' IEEE Trans. Electron Devices, vol.39, pp.2050-2059, Sept. 1992 https://doi.org/10.1109/16.155877
  23. S. N. Mohamed, M. S. Unlu, and H. Morkoc, 'Optically controlled current voltage characteristics of an ion-implanted MESFET,' Solid State Electron., vol. 33, pp.1499-1509, Dec. 1990 https://doi.org/10.1016/0038-1101(90)90129-3
  24. A. Madjar, A. Paolella and P. R. Herczfeld, 'Analytical model for optically generated currents in GaAs MESFET's,' IEEE Trans. Microwave Theory Tech., vol. 0, pp.1681-1691, Aug. 1992 https://doi.org/10.1109/22.149548
  25. P. Chakrabarti, S. K. Srestha, A. Srivastava, and D. Saxena, 'Switching characteristics of an optically controlled GaAs MESFET,' IEEE Trans. Microwave Theory Tech., vol. 42, pp. 365-375, Mar. 1994 https://doi.org/10.1109/22.277428
  26. P. Chakrabarti, A. Gupta, and N. A. Khan, 'An analytical model of GaAs OPFET,' Solid State Electron., vol. 39, pp.1481-1490, Oct. 1996 https://doi.org/10.1016/0038-1101(96)00061-5
  27. A. Madjar, A. Paolella, and P. R. Herczfeld, 'Modeling the optical switching of MESFET's considering the external and internal photovoltaic effects,' IEEE Trans. Microwave Theory Tech., vol. 42, pp.62-67, Jan. 1994 https://doi.org/10.1109/22.265529
  28. 조남홍, 곽계달, '4 단자 GaAs MESFET Model의 SPICE 탑재,' 대한전자공학회논문지, 제31권 A편 제1호, pp. 39-47, 1994
  29. 노태문, 김영식, 김영웅, 박위상, 김범만, '바이어스 효과를 포함하는 GaAs MESFET의 새로운 비선형 채널전류 모형,' 대한전자공학회논문지, 제34권 D편 제4호, pp. 17-26, 1997
  30. 박정욱, 김재인, 서정하, '선형 공핍층 근사를 이용한 단채널 GaAs MESFET의 전류 전압 특성 연구,' 대한전자공학회논문지, 제37권 TE편 제2호, pp. 6-11, 2000