Structural, electrical and optical properties of Al-doped ZnO thin films by pulsed DC magnetron sputtering

  • Ko, Hyung-Duk (Advanced Material Process of Information Technology, Sungkyunkwan University) ;
  • Lee, Choong-Sun (Advanced Material Process of Information Technology, Sungkyunkwan University) ;
  • Kim, Ki-Chul (Information Storage Device, Electronics and Telecommunications Research Institut) ;
  • Lee, Jae-Seok (Division of Material Science and Engineering, Korea University) ;
  • Tai, Weon-Pil (Institute of Advanced Materials, Inha University) ;
  • Suh, Su-Jeong (Advanced Material Process of Information Technology, Sungkyunkwan University) ;
  • Kim, Young-Sung (Advanced Material Process of Information Technology, Sungkyunkwan University)
  • Published : 2004.08.01

Abstract

We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of $400^{\circ}C$ was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited $7.40\times 10^{-4}\Omega \textrm{cm}$. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85∼90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.

Keywords

References

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