Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Extending the Single-Mode-Operation Radius of the Oxide-VCSEL by Controlling the Thickness and Position of the Oxide-Layer

Oxide층의 두께와 위치 조절을 통한 oxido-VCSEL의 단일모드 동작반경 확장

  • 김남길 (아주대학교 전자공학부) ;
  • 김상배 (아주대학교 전자공학부)
  • Published : 2004.09.01
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Abstract

We have proposed a design methodology for large active-area single-mode VCSELS, which have higher reliability and output power, and are well-suited for high-speed operation. The key idea underlying the design methodology is to reduce the effective index difference between active and cladding regions by controlling the thickness and position of the oxide layer. The idea is confirmed by the self-consistent effective index method. By placing the oxide layer position properly, we can increase the radius of the oxide aperture for single-mode operation by 3 times.

oxide 층의 위치와 두께 조절을 통하여 oxide-VCSEL이 단일모드로 동작하는 활성영역의 반경을 확장하는 방법을 Self-consistent effective-index 방법을 이용하여 제시하였다. 이렇게 활성영역이 넓어지면 고속, 고신뢰도, 고출력 동작에 유리한 단일모드 VCSEL을 만들 수 있게 된다. 고출력을 위하여 단일모드로 동작하는 활성영역을 확대하는 방법을 하면 다음과 같다. 첫째 oxide 층은 활성층에서 멀리 떨어진 곳에 위치시켜야 한다 둘째, oxide 층은 얇게 만들어야 한다. 셋째, oxide층을 node에 위치시켜야 한다. 그리고 고출력을 위하여 p-DBR 쌍의 수를 줄이는 것은 단일모드 동작조건을 변화시키지 않는다. 이 방법을 사용하면 단일모드로 동작하는 oxide-aperture 크기를 3m% 이상 키울 수 있다.

Keywords

References

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