Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Design and Fabrication of butt-coupled(BT) sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD) using planar buried heterosture(PBH)

저 전류 및 고 효율로 동작하는 양자 우물 매립형 butt-coupled sampled grating distributed bragg reflector laser diode 설계 및 제작

  • Oh Su Hwan (Electronics and Telecommunications Research Institute) ;
  • Lee Chul-Wook (Electronics and Telecommunications Research Institute) ;
  • Kim Ki Soo (Electronics and Telecommunications Research Institute) ;
  • Ko Hyunsung (Electronics and Telecommunications Research Institute) ;
  • Park Sahnggi (Electronics and Telecommunications Research Institute) ;
  • Park Moon-Ho (Electronics and Telecommunications Research Institute) ;
  • Lee Ji-Myon (Dept. of Materials Sci. and Metallurgical Eng, Sunchon National University)
  • 오수환 (한국전자통신연구원 반도체 원천기술연구소 광통신소자연구부) ;
  • 이철욱 (한국전자통신연구원 반도체 원천기술연구소 광통신소자연구부) ;
  • 김기수 (한국전자통신연구원 반도체 원천기술연구소 광통신소자연구부) ;
  • 고현성 (한국전자통신연구원 반도체 원천기술연구소 광통신소자연구부) ;
  • 박상기 (한국전자통신연구원 반도체 원천기술연구소 광통신소자연구부) ;
  • 박문호 (한국전자통신연구원 반도체 원천기술연구소 광통신소자연구부) ;
  • 이지면 (순천대학교 금속재료 공학과)
  • Published : 2004.10.01
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Abstract

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

본 논문에서는 저 전류 및 고 효율로 동작하는 planar buried heterostructure(PBH) 구조로 sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD)를 처음으로 설계하고 제작하였다. 특히 활성층과 도파로층의 높은 결합 효율을 얻기 위해 건식 식각과 습식 식각을 같이 사용하여 결함이 거의 없는 butt-coupling(BT) 계면을 형성하였다. 제작된 파장 가변레이저의 평균 발진 임계전류는 약 12 mA로 ridged waveguide(RWG)와 buried ridge stripe(BRS) 구조로 제작된 결과 보다 두 배 정도 낮게 나타났으며, 광 출력은 200 mA에서 약 20 mW 정도로 RWG 와 BRS 보다 각각 9 mW, 13 mW 더 우수하게 나타났다. 그리고 파장 가변 영역을 측정한 결과 44 nm로 설계결과와 일치하였으며, 최대 파장 가변 영역 안에서 출력 변화 폭이 5 dB 이내로서 RWG 구조의 9 dB보다 출력변화 폭이 4 dB 적게 나타났다. 전체 파장 가변 영역에서 SMSR이 35 dB 이상으로 나타났다.

Keywords

References

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