Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Stability of Sputtered Hf-Silicate Films in Poly Si/Hf-Silicate Gate Stack Under the Chemical Vapor Deposition of Poly Si and by Annealing

  • Kang, Sung-Kwan (School of Material Science and Engineering, Stanford University) ;
  • Sinclair, Robert (School of Material Science and Engineering, Stanford University) ;
  • Ko, Dae-Hong (Department of Ceramic Engineering, Yonsei University)
  • Published : 2004.09.01
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Abstract

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

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References

  1. B. Cheng, M. Cao, R. Rao, A. Inani, P. V. Voorde, and W. M. Greene, 'The Impact of High-k Gate Dielectrics and Metal Gate Electrodes on Sub-100 nm MOSFETs,' IEEE Trans. Electron Devices, 46 [7] 1537-44 (1999) https://doi.org/10.1109/16.772508
  2. J.P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, 'High Temperature Stability in Lanthanum and Zirconia-Based Gate Dielectrics,' J. Appl. Phys., 90 [7] 3476-82 (2001) https://doi.org/10.1063/1.1391418
  3. S. K. Kang, D. H. Ko, E. H. Kim, M. H. Cho, and C. N. Whang, 'Interfacial Reactions in the Thin Film $Y_2O_3$ on Chemically Oxidized (100) Silicon Substrate Systems,' Thin Solid Films, 353 8-11 (1999) https://doi.org/10.1016/S0040-6090(99)00418-6
  4. M. Copel, M. Gribelyuk, and E. Gusev, 'Structure and Stability of Ultrathin Zirconium Oxide Layers on Si(001),' Appl. Phys. Lett., 76 [4] 436-38 (2000) https://doi.org/10.1063/1.125779
  5. W. J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. J. Jeon, K. Onish, T. Ngai, S. Banerjee, and J. C. Lee, 'MOSCAP and MOSFET Characteristics Using $ZrO_2$ Gate Dielectric Deposited Directly on Si' Tech. Dig. Int. Electron Devices Meet., 145-48 (1999)
  6. G. D. Wilk, R. M. Wallace, and J. M. Anthony, 'High-k Gate Dielectrics: Current Status and Materials Properties Considerations,' J. Appl. Phys., 89 [10] 5243-75 (2001) https://doi.org/10.1063/1.1361065
  7. A. Callegari, E. Cariter, M. Gribelyuk, H. F. Okornschmidt, and T. Zabel,'Physical and Electrical Characterization of Hafnium Oxide and Hafnium Silicate Sputtered Films,' J. Appl. Phys., 90 [12] 6466-75 (2001) https://doi.org/10.1063/1.1417991
  8. K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. Jeon, C. S. Kang, B. H. Lee, R. Nieh, and J. C. Lee, 'Dopant Penetration Effects on Polysilicon Gate Hf $O_2$ MOSFET's,' Symposium on VLSI Tech., 131-32 (2001)
  9. B. H. Lee, R. Choi, L. G. Kang, S. Gopalan, R. Nieh, K. Onishi, Y. Jeon, W. J. Qi, C. S. Kang, and J. C. Lee, 'MOSFET Devices with Polysilicon on Single-Layer Hf$O_2$ High-k Dielectrics,' Tech. Dig. Int. Electron Devices Meet., 35-8 (2000)
  10. G. D. Wilk, R. M. Wallace, and J. M. Anthony,'Hafnium and Zirconium Silicates for Advanced Gate Dielectrics,' J. Appl. Phys., 87 [1] 484-92 (2000) https://doi.org/10.1063/1.371888
  11. G. D. Wilk and R. M. Wallace, 'Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Silicon,' Appl. Phys. Lett., 74 [19] 2854-56 (1999) https://doi.org/10.1063/1.124036
  12. A. Kawamoto, K. Cho, P. Griffin, and R. Dutton, 'First Principles Investigation of Scaling Trends of Zirconium Silicate Interface Band Offsets'' J. Appl. Phys., 90 [3] 1333-41 (2001) https://doi.org/10.1063/1.1378338
  13. J. Morais, E. B. O. da Rosa, L. Miotti, R. P. Pezzi, I. J. R. Baumvol, A. L. P. Rotondaro, M. J. Bevan, and L. Colombo, 'Stability of Zirconium Silicate Films on Si Under Vacuum and O2 Annealing,' Appl. Phys. Lett., 78 [17] 24'46-48 (2001) https://doi.org/10.1063/1.1334907
  14. W. J. Qi, R. Nieh, E. Dharmarajan, B. H. Lee, Y. Jeon, L. Kang, K. Onishi, and J. C. Lee, 'Ultrathin Zirconium Silicate Film with Good Thermal Stability for Alternative Gate Dielectric Applicat,' Appl. Phys. Lett., 77 [11] 1704-06 (2000)
  15. S.K. Kang, J. J. Kim, B. G. Min, D.H. Ko, C. W. Yang, and K. Y. Lim, 'Physical and Electrical Properties of Polycrys talline Si_{1-x}Ge \Ge{_x}Deposited Using Single-Wafer-Type Low Pressure CVD,' J. Electrochem. Soc., 151 [1] G13-G17 (2004) https://doi.org/10.1149/1.1629100
  16. J. J. Chambers and G. N. Parsons, 'Physical and Electrical Characterization of Ultrathin Yttrium Silicate Insulators on Silicon,' J. Appl. Phys., 90 [2] 918-33 (2001) https://doi.org/10.1063/1.1375018
  17. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, 'Randnbook of X-Ray Photoelectron Spectroscopy,' pp. 44, 56, and 168, Edited by J. Chastain, Perkin-Elmer Corp. 1992,
  18. T. Kamins, 'Polycrystalline Silicon for the Intergrated Circuit Applications,' p. 23, Kluwer Academic Publishers, Boston/Dordrecht /Lancaster, 1988
  19. I. Barin, 'Thermochemical Data of Pure Substances,' pp. 1352, 1359, 1384, and 1736, Edited by H. F. Ebel and C. Dyllick-Brenzinger, VCR, New York, 1989