Abstract
Growth of ZnO epitaxial films have been carried out on (0001) sapphire substrates by RF magnetron sputtering. The single crystalline ZnO films of the thickness about 400-500 mm were grown successfully. At the various substrate temperatures of 200～$600^{\circ}C$, the growth behavior and optical properties of the epitaxial films have been characterized. As-grown ZnO films were annealed at the temperatures of 400, 600 and $800^{\circ}C$ respectively in order to characterize the optical properties. The carrier concentration of ZnO films annealed at the temperature of $600^{\circ}C$ was measured $2.6${\times}$10^{16}\textrm{cm}^{-3}$ by Hall measurements.
단결정상의 ZnO 에피 박막 성장을 사파이어 기판의 (0001)면 상에 RF magnetron sputtering 법으로 수행하였다. 200～$600^{\circ}C$까지의 기판의 온도를 변화하여 가면서 ZnO 에피 박막의 성장 거동을 조사하였으며, 성장된 ZnO 박막에 대하여 산소분위기에서 400, 600, $800^{\circ}C$에서 각각 아닐링을 하여 이에 대한 광 특성을 평가하였다. Hall measurement에 의해 측정 된 carrier concentratin은 $600^{\circ}C$에서 아닐링하여 $2.6${\times}$10^{16}\textrm{cm}^{-3}$이었다.
