Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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A study on the growth of rutile single crystal by skull melting method

스컬법에 의한 루틸 단결정 성장에 관한 연구

  • Published : 2004.12.01
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Abstract

Rutile single crystals were grown by the skull melting method. Ti metal ring was used for initial RF induction heating. The grown crystals were cut into wafer of 5.5 mm diameter and 1mm thickness. The wafers were annealed in air at $1300^{\circ}C$ up to 15 hours and their transmittance spectra $(\lambda= 200~25000 nm)$ were obtained.

초기 RF유도가열을 위해 Ti 금속링을 사용하여 스컬법에 의해 루릴 단결정을 성장시켰다. 성장시킨 단결정은 ${\varnothing}55.5{\times}1.0mm$의 wafer로 가공하였으며,$1300^{\circ}C$에서 15시간까지 대기중에서 열처리 하여 $\lambda=200~25000nm$의 범위에서 투광도를 비교하였다.

Keywords

References

  1. C.G. Bergeron and S.H. Risbud, 'Introduction to phase equilibria in ceramics', American Ceramic Society 12 (1984)
  2. M. Higuchi and K Kodaira, 'Solid-liquid interface shapes in the floating zone growth of rutile single crystals', Materials Research Bulletin 29 (1994) 545 https://doi.org/10.1016/0025-5408(94)90044-2
  3. H.I. Jun, 'Synthesis of $TiO_2$ powders and growth of rutile single crystal by verneuil method', A Doctoral Dissertation, Chonbuk National University (1993) 1
  4. H.T. Jeon, B.H. Kim, S.K. Sohn and K.H. Auh, 'Synthesis of $TiO_2$ powders and growth of rutile by verneuil method', J. of the Korean Crystal Growth and Crystal Technology 2(1) (1992) 60
  5. H. Machida and T. Fukuda, 'Difficulties encountered during the czochralski growth of $TiO_2$ single crystals', J. of Crystal Growth 112 (1991) 835 https://doi.org/10.1016/0022-0248(91)90142-R
  6. H. Machida, K Hoshikawa and T. Fukuda, 'Unstable forming of rutile crystal grown by EFG method', Pro. the 12th KACG tech. meeting and the 4th Korea-Japan EMGS (1997) 159
  7. M. Higuchi, K Hatta, J. Takahashi, K Kodaira, H. Kaneda and J. Saito, 'Floating-zone growth of rutile single crystal inclined at $48^{\circ}$ to the c-axis', J. of Crystal Growth 208 (2000) 501 https://doi.org/10.1016/S0022-0248(99)00446-7
  8. J.K. Park, K.H. Kim, I. Tanaka and KB. Shim, 'Characteristics of rutile single crystals grown under two different oxygen partial pressures', J. of Crystal Growth 268 (2004) 103 https://doi.org/10.1016/j.jcrysgro.2004.04.105
  9. M. Higuchi, T. Togi and K Kodaira, 'Growth of rutile single crystals by the pulling-down method', J. of Crystal Growth 230 (1999) 450 https://doi.org/10.1016/S0022-0248(99)00119-0
  10. J.K. Park, K.B. Shim, K.H. Auh and I. Tanaka, 'Growth of $TiO_2$ (rutile) single crystal by FZ method under high oxygen pressure', J. of the Korean Crystal Growth and Crystal Technology 11(3) (2001) 85
  11. S. Yanqing, G. Jingjie, I. jun, L. Guizhong and L Yuan, 'Composition control of a TiAI melt during the induction skull melting (ISM) process', J. of Alloys and Compounds 334 (2002) 261 https://doi.org/10.1016/S0925-8388(01)01766-2
  12. V.I. Aleksandrov, V.V. Osiko and A.M. Prokhorov, 'Synthesis and crystal growth of refractory materials by R.E melting in a cold container', Current Topics in Materials Science 1 (1978) 432
  13. J.W. Seok and J.K Choi, 'A study on the alexandritelike cubic zirconia single crystal by skull melting method', J. of the Korean Crystal Growth and Crystal Technology 13(5) (2003) 205
  14. T.C. Lu, S.Y. Wu, L.B. Lin and W.C. Zheng, 'Defects in the reduced rutile single crystal', Physica B 304 (2001) 147 https://doi.org/10.1016/S0921-4526(01)00337-4
  15. T. Umebayashi, K Asai, S. Yamamoto, A. Miyshita and M. Yoshikawa, 'Effects of hydrogen impurities on photoelectrochemical properties of $TiO_2$' , The Electrochemical Society, Inc. 204th (2003) abs. 26