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Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structure with Various Thicknesses in One Chip

여러 가지 높이를 갖는 삼각형 구조 InGaAs/GaAs 양자세선 구조 성장

  • Kim Seong-Il (Semiconductor Device Center, Division of System Technology, Korea Institute of Science & Technology) ;
  • Kim Young-Whan (Semiconductor Device Center, Division of System Technology, Korea Institute of Science & Technology) ;
  • Han Il-Ki (Nano-Device Reserach Center, Future Technology Research Division, Korea Institute of Science & Technology)
  • 김성일 (한국과학기술연구원 시스템연구부 반도체 소자실) ;
  • 김영환 (한국과학기술연구원 시스템연구부 반도체 소자실) ;
  • 한일기 (한국과학기술연구원 미래연구부 나노소자 연구센터)
  • Published : 2004.06.01

Abstract

InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

Keywords

References

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