Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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A Study on Growth and Characterization of Magnetic Semiconductor GaMnAs Using LT-MBE

저온 분자선 에피택시법을 이용한 GaMnAs 자성반도체 성장 및 특성 연구

  • 박진범 (고려대학교 재료공학과) ;
  • 고동완 (한국과학기술연구원 나노소자연구센터) ;
  • 박용주 (한국과학기술연구원 나노소자연구센터) ;
  • 오형택 (한국과학기술연구원 나노소자연구센터) ;
  • 신춘교 (한국과학기술연구원 나노소자연구센터) ;
  • 김영미 (한국기초과학지원연구원) ;
  • 박일우 (한국기초과학지원연구원) ;
  • 변동진 (고려대학교 재료공학과) ;
  • 이정일 (한국과학기술연구원 나노소자연구센터)
  • Published : 2004.04.01
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Abstract

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

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References

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