Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Silicon Intrinsic Gettering Technology: Understanding and Practice

실리콘 Intrinsic Gettering 기술의 이해와 응용

  • 최광수 (수원대학교 공과대학 전자재료공학과)
  • Published : 2004.01.01
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Abstract

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

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