Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of H2 on The Diamond Film Growth Mechanism by HFCVD Method Using CH3OH/H2O

HFCVD법에 의한 H2 다이아몬드 박막 제조에 수소가 미치는 영향

  • Lee Kwon-Jai (Department of Physics, Soongsil University) ;
  • Shin Jae-Soo (Department of Electronic Materials Science, Daejeon University) ;
  • Kwon Ki-Hong (Department of Electronic Materials Science, Daejeon University) ;
  • Lee Min-Soo (Department of Applied Optics and electromagnetics, Hannam University) ;
  • Koh Jae-Gui (Department of Physics, Soongsil University)
  • Published : 2004.12.01
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Abstract

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

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